Rozhin, A.G.; Klyui, N.I.; Litovchenko, V.G.; Melnik, V.P.; Romanyuk, B.N.; Piryatinskii, Yu.P.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
Implantation of B⁺, N⁺, and B⁺+N⁺ ions into initial silicon wafers was carried out before anodization process. The results of photoluminescent (PL) study of porous Si samples prepared on B⁺ or N⁺ implanted wafers show a ...