Перегляд за автором "Reshetnyak, M.V."

Сортувати за: Порядок: Результатів:

  • Growth and structure of WC/Si multilayer x-ray mirror 
    Pershyn, Y.P.; Chumak, V.S.; Shypkova, I.G.; Mamon, V.V.; Devizenko, A.Yu.; Kondratenko, V.V.; Reshetnyak, M.V.; Zubarev, E.N. (Вопросы атомной науки и техники, 2018)
    WC/Si multilayer X-ray mirrors (MXMs) with nominal layers thicknesses of 0.2…30.3 nm (periods: 0.7…38.9 nm) were deposited by direct current magnetron sputtering and studied by X-ray diffraction and cross-sectional ...
  • On application of X-ray aproximation method for studying the substructure of sufficiently perfect samples 
    Malykhin, S.V.; Garkusha, I.E.; Makhlay, V.A.; Surovitsky, S.V.; Reshetnyak, M.V.; Borisova, S.S. (Functional Materials, 2017)
    The technique of X-ray diffraction investigation of coherence length and micro-strain level using approximation of diffraction line profiles by Gaussian and Cauchy functions as well as by harmonic analysis has been worked ...
  • The methodology for X-ray diffraction investigation of icosahedral quasicrystals substructure 
    Bazdyreva, S.V.; Fedchuk, N.V.; Malykhin, S.V.; Pugachov, A.T.; Reshetnyak, M.V.; Zubarev, E.N. (Functional Materials, 2013)
    Method of quantitative estimates of the parameters of the icosahedral quasicrystals substructure, including specific phason defects, developed and successfully worked out using the experimental models of quasicrystalline ...