Borkovska, L.V.; Stara, T.R.; Korsunska, N.O.; Pechers’ka, К.Yu.; Germash, L.P.; Bondarenko, V.O.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
Effect of post-growth thermal annealing within the temperature range 200 to
430 ºC for 15 min on the luminescent characteristics of CdSe/ZnSe quantum dot (QD)
heterostructure was studied. Annealing at lower temperatures ...