Перегляд за автором "Osipov, L.S."

Сортувати за: Порядок: Результатів:

  • Formation of Nanostructured Relief of TiN—Fe Heterostructures in Hybrid Helicon-Arc Plasma Reactor 
    Rudenko, E.M.; Korotash, I.V.; Polotskiy, D.Y.; Osipov, L.S.; Dyakin, M.V.; Prikhna, T.A.; Shapovalov, A.P. (Металлофизика и новейшие технологии, 2015)
    The features of the physical mechanisms of controlled ion-plasma formation of the new functional nanomaterials are investigated. The technological regimes of formation of functional nanostructured materials under combined ...
  • Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique 
    Shapovalov, A.P.; Korotash, I.V.; Rudenko, E.M.; Sizov, F.F.; Dubyna, D.S.; Osipov, L.S.; Polotskiy, D.Yu.; Tsybri, Z.F.; Korchovyi, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF ...
  • Structure and optical properties of AlN films obtained using the cathodic arc plasma deposition technique 
    Shapovalov, A.P.; Korotash, I.V.; Rudenko, E.M.; Sizov, F.F.; Dubyna, D.S.; Osipov, L.S.; Polotskiy, D.Yu.; Tsybrii, Z.F.; Korchovyi, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Aluminum nitride (AlN) film coatings have been obtained by a new technique of hybrid helikon-arc ion-plasma deposition. Possibility to combine the magnetic-filtered arc plasma deposition technique with a treatment in RF ...
  • Сontrolling parameters determining technological properties of a helicon discharge system 
    Semenyuk, V.F.; Virko, V.F.; Korotash, I.V.; Osipov, L.S.; Polotsky, D.Yu.; Rudenko, E.M.; Slobodyan, V.M.; Shamrai, K.P. (Вопросы атомной науки и техники, 2013)
    In experiments on two helicon sources driven by a planar antenna, it is shown that the plasma density in the drift chamber and the energies and density of the ion flux onto the substrate holder can be effectively controlled ...