Перегляд за автором "Oleksenko, P.Ph."

Сортувати за: Порядок: Результатів:

  • Electrophysical сharacteristics of LEDs based on GaN epitaxial films 
    Oleksenko, P.Ph.; Sukach, G.A.; Smertenko, P.S.; Vlaskina, S.I.; Bogoslovskaya, A.B.; Spichak, I.O.; Shin, D.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    Forward and reverse current-voltage (I-V) characteristics of light emitting diodes based on GaN epitaxial films were investigated by differential spectroscopy. This technique is based on calculating the differential slope ...
  • Method of low-temperature rise of laser diode quality 
    Kamuz, A.M.; Oleksenko, P.Ph.; Kamuz, O.A.; Kamuz, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    In 1987 the authors of this article discovered the effect of irreversible gigantic modification (IGM) of semiconductors. Basing on the IGM phenomenon the authors have developed technological method that enables to considerably ...
  • The way of photonic crystal formation in A³B³ and A²B⁶ semiconductors 
    Kamuz, A.M.; Oleksenko, P.Ph.; Kamuz, O.A.; Kamuz, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    It is shown that under influence of irreversible gigantic modification in monocrystalline A³B³ and A²B⁶ semiconductors, local areas with the highly changed refractive index are created. It was shown that a complex refraction ...