Перегляд за автором "Oberemok, O."

Сортувати за: Порядок: Результатів:

  • AES and XPS characterization of TiN layers formed and modified by ion implantation 
    Melnik, V.; Popov, V.; Kruger, D.; Oberemok, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Compositional characterization of sputtered and implanted titanium nitride (TiN) layers for microelectronics application is performed based on Auger Electron Spectroscopy (AES) and X-ray induced Photoelectron Spectroscopy ...
  • Borophosphosilicate glass component analysis using secondary neutral mass spectrometry 
    Oberemok, O.; Lytvyn, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    In the present study the SNMS technique for the quantitative component analysis of the borophosphosilicate glass layers was used. These layers were deposited on the silicon substrate by chemical vapor deposition method. ...
  • Ultrasound effect on radiation damages in boron implanted silicon 
    Romanjuk, B.; Krüger, D.; Melnik, V.; Popov, V.; Olikh, Ya.; Soroka, V.; Oberemok, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect ...