Semenov, A.V.; Lopin, A.V.; Puzikov, V.M.; Muto, Sh.
(Functional Materials, 2005)
SiC films have been obtained by direct deposition from a C and Si ions flow at energy values in the 30 to 1.500 eV range. The films deposited at the substrate temperature 600 С were chemically and structurally disordered. ...