It was shown that in the GaAsP/GaP and InGaN/GaN heterostructures during current passage redistribution of electroluminescence intensity on the structure surface takes place simultaneously with radiation of acoustic ...

Сomplex researches of light-emitting structures based on А₃В₅ compounds have been carried out. It has been shown that at current loading exceeding the acousticemission threshold, there arises a change in the electroluminescence ...

It is shown, that in heterostructures based on A³B⁵ compounds acoustic emission occurrence, current and light fluctuations, evolution electroluminescence spectrums, current-voltage characteristics degradation occur ...

Correlation of dependences of acoustic emission parameters and the combination aggregate harmonic amplitude has been studied for two colliding large-amplitude ultrasonic waves in LiF single crystals. This correlation is ...