Перегляд за автором "Lashkarev, G.V."

Сортувати за: Порядок: Результатів:

  • Diluted magnetic layered semiconductor InSe:Mn with high Curie temperature 
    Lashkarev, G.V.; Sichkovskyi, V.I.; Radchenko, M.V.; Aleshkevych, P.; Dmitriev, O.I.; Butorin, P.E.; Kovalyuk, Z.D.; Szymczak, R.; Slawska-Waniewska, A.; Nedelko, N.; Yakiela, R.; Balagurov, A.M.; Beskrovnyy, A.I.; Dobrowolsk, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    We present a detailed study of layered semiconductor InSe doped with Mn. Xray and neutron diffraction analyses of (In,Mn)Se single crystals show the presence of a main phase as In₁−xMnxSe solid solution, the second ...
  • Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different sputtering power 
    Myroniuk, D.V.; Ievtushenko, A.I.; Lashkarev, G.V.; Maslyuk, V.T.; Timofeeva, I.I.; Baturin, V.A.; Karpenko, O.Yu.; Kuznetsov, V.M.; Dranchuk, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Transparent conductive oxide thin films of Al-doped ZnO grown by rf magnetron sputtering were irradiated with high energy electrons with the energy 12.6 MeV and fluence 5·10¹⁴ e/cm². The films were produced using different ...
  • Hot wall growth and properties of lead telluride films doped by germanium and gallium 
    Lashkarev, G.V.; Radchenko, M.V.; Slynko, E.I.; Vodopiyanov, V.N.; Asotsky, V.V.; Kaminsky, V.M.; Beketov, G.V.; Rengevich, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The researches results of films (PbTe)₁₋y(GaTe)y and (Pb₁₋xGexTe)₁₋y(GaTe)y of n-type conductivity with carrier concentration within (2⋅10¹⁷÷9⋅10¹⁸) cm⁻³ are represented. The films were growth by modified hot wall technology ...
  • Properties of nanoparticles ZnO:Mn immobilized in polyethylene matrix 
    Lashkarev, G.V.; Demydiuk, P.V.; Yurkov, G.Yu.; Dmitriev, O.I.; Bykov, O.I.; Klochkov, L.I.; Pyratinskiy, Y.P.; Slynko, E.I.; Khandozhko, A.G.; Popkov, O.V.; Taratanov, N.A. (Наноструктурное материаловедение, 2010)
    Nanoparticles ZnO:Mn (3–5nm) immobilized in polyethylene matrix were synthesized. The samples with different content of the manganese (5, 10 and 20%) in the initial solution of the Mn and Zn precursors were investigated ...
  • Properties of ZnO:Mn Nanoparticles Immobilized in Polyethylene Matrix 
    Lashkarev, G.V.; Demydiuk, P.V.; Yurkov, G.Yu.; Dmitriev, O.I.; Bykov, O.I.; Klochkov, L.I.; Pyratinskiy, Yu.P.; Slynko, E.I.; Khandozhko, A.G.; Popkov, O.V.; Taratanov, N.A. (Наносистеми, наноматеріали, нанотехнології, 2010)
    ZnO:Mn nanoparticles (of 3—5 nm) immobilized in polyethylene matrix are synthesized. The samples with different content of the manganese (5%, 10%, and 20% of initial solution of Mn and Zn precursors) are investigated by ...
  • Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers 
    Osinniy, V.; Dybko, K.; Jedrzejczak, A.; Arciszewska, M.; Dobrowolski, W.; Story, T.; Radchenko, M.V.; Sichkovskiy, V.I.; Lashkarev, G.V.; Olsthoorn, S.M.; Sadowski, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga₁₋xMnxAs epitaxial layers (0.015 ≤ x ≤ 0.06). Thermoelectric power analysis gives ...