Veleschuk, V.P.; Lyashenko, O.V.; Vlasenko, Z.K.; Kysselyuk, M.P.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
It was shown that in the GaAsP/GaP and InGaN/GaN heterostructures during
current passage redistribution of electroluminescence intensity on the structure surface
takes place simultaneously with radiation of acoustic ...