Перегляд за автором "Kvon, Z.D."

Сортувати за: Порядок: Результатів:

  • HgCdTe quantum wells grown by molecular beam epitaxy 
    Dvoretsky, S.A; Ikusov, D.G.; Kvon, Z.D.; Mikhailov, N.N.; Remesnik, V.G.; Smirnov, R.N.; Sidorov, Yu.G.; Shvets, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    CdxHg₁₋xTe-based (x = 0 – 0.25) quantum wells (QWs) of 8 – 22 nm in thickness were grown on (013) CdTe/ZnTe/GaAs substrates by molecular beam epitaxy. The composition and thickness (d) of wide-gap layers (spacers) were ...
  • Spin splitting of surface states in HgTe quantum wells 
    Dobretsova, A.A.; Kvon, Z.D.; Krishtopenko, S.S.; Mikhailov, N.N.; Dvoretsky, S.A. (Физика низких температур, 2019)
    We report on beating appearance in Shubnikov–de Haas oscillations in conduction band of 18–22 nm HgTe quantum wells under applied top-gate voltage. Analysis of the beatings reveals two electron concentrations at the Fermi ...