Перегляд за автором "Kutsyk, M.M."

Сортувати за: Порядок: Результатів:

  • Studenyak, I.P.; Kranjčec, M.; Kutsyk, M.M.; Pal, Yu.O.; Neimet, Yu.Yu.; Izai, V.Yu.; Makauz, I.I.; Cserhati, C.; Kökényesi, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    (Ag₃AsS₃)x(As₂S₃)₁₋x (x = 0.3; 0.6; 0.9) thin films were deposited onto a silica substrate by rapid thermal evaporation. The amount of Ag-rich crystalline phase precipitates on the surfaces of the films increases with ...
  • Studenyak, I.P.; Kutsyk, M.M.; Studenyak, V.I.; Bendak, A.V.; Izai, V.Yu.; Kúš, P.; Mikula, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Cu₆.₃₅P₁.₇₇S₄.₇₂Br₀.₁₅ thin film was obtained using the high target utilization sputtering onto c-cut sapphire substrates. X-ray diffraction studies show the film to be amorphous with some crystalline inclusions. SEM ...
  • Studenyak, I.P.; Kutsyk, M.M.; Rati, Y.Y.; Izai, V.Yu.; Kökényesi, S.; Daróci, L.; Bohdan, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films were deposited onto a silica substrate by using rapid thermal evaporation. The surfaces of the films were covered with Ag-rich crystalline micrometer-sized cones. The optical transmission ...
  • Studenyak, I.P.; Kutsyk, M.M.; Rati, Y.Y.; Izai, V.Yu.; Kökényesi, S.; Daróci, L.; Bohdan, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films were deposited onto a silica substrate by using rapid thermal evaporation. The surfaces of the films were covered with Ag-rich crystalline micrometer-sized cones. The optical transmission ...