Nikonyuk, E.S.; Shlyakhovyi, V.L.; Kovalets, M.O.; Kuchma, M.I.; Zakharuk, Z.I.; Savchuk, A.I.; Yuriychuk, I.M.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
The temperature dependences (T = 80 – 420 K) of the concentration of charge
carriers and the Hall mobility in undoped CdTe and CdTe:Gd single crystals grown by
the Bridgman method are studied. It is found that the ...