Перегляд за автором "Korotyeyev, V.V."

Результати 1-5 з 5

Comparison of electron transport in polar materials for the models of low-density and high-density electron gas. Application to bulk GaN

Korotyeyev, V.V.; Syngayivska, G.I.; Kochelap, V.A.; Klimov, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

We analyzed the steady-state electron transport for bulk GaN in frame of two opposite approaches: the electron temperature approach that assumes a high-density electron gas and numerical single-particle Monte-Carlo ...
Electron transport in crossed electric and magnetic fields under the condition of the electron streaming in GaN

Syngayivska, G.I.; Korotyeyev, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)

High-field electron transport has been studied in crossed electric and magnetic fields in bulk GaN with doping of 10¹⁶ cm⁻³ and compensation around 90% at the low lattice temperature (30 K). The electron distribution ...
Monte Carlo Simulation of hot electron effects in compensated GaN semiconductor at moderate electricfields

Syngaivska, G.I.; Korotyeyev, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)

The electron distribution function and transport characteristics of hot electrons in GaN semiconductor are calculated by the Monte Carlo method. We studied the electron transport at temperatures of 10, 77, and 300 K under ...
Peculiarities of THz-electromagnetic wave transmission through the GaN films under conditions of cyclotron and optical phonon transit-time resonances

Korotyeyev, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)

The theory of THz radiation transmission through the film of compensated GaN of cubic modification under action of electric and magnetic fields has been developed. In the THz frequency range, spectra of the dynamic ...
Theory of high-field electron transport in the heterostructures AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs with delta-doped barriers. Effect of real-space transfer

Korotyeyev, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)

Steady-state electric characteristics of quantum heterostructures AlxGa₁₋xAs/GaAs/AlxGa₁₋xAs with -doped barriers have been analyzed in this work. It has been shown that at high doping the additional low-conductive channels ...

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Перегляд за автором "Korotyeyev, V.V."

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Перегляд за автором "Korotyeyev, V.V."

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