Перегляд за автором "Ivanov, S.V."

Сортувати за: Порядок: Результатів:

  • Current transport through ohmic contacts to indiume nitride with high defect density 
    Sai, P.O.; Safriuk, N.V.; Shynkarenko, V.V.; Brunkov, P.N.; Jmerik, V.N.; Ivanov, S.V. (Functional Materials, 2018)
    The temperature dependences of contact resistivity are measured for Pd/Ti/Au ohmic contacts toward indium nitride (with different doping level 2.0ċ10¹⁸ and 8.3ċ10¹⁸ cm⁻³) over the wide temperature range (4.2 - 380 K). The ...
  • High-efficient up-conversion of photoluminescence in CdSe quantum dots grown in ZnSe matrix 
    Strelchuk, V.V.; Valakh, M.Ya.; Vuychik, M.V.; Ivanov, S.V.; Kop'ev, P.S.; Shubina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The intensive up-conversion photoluminescence at low temperatures in CdSe/ZnSe structures with single CdSe inserts of the nominal thickness 1.5 monolayer was observed. Excitation power dependensies show a nearly quadratic ...