Fedorovich, О.А.; Hladkovskiy, V.V.; Polozov, B.P.; Kruglenko, М.P.
(Вопросы атомной науки и техники, 2015)
The influence of the bias voltage on the silicon etching rate in the plasma-chemical reactor (PСR) with controlled magnetic fields have been investigated. The dependences of the silicon etching rate on the power, discharge ...