Перегляд за автором "Halyan, V.V."

Сортувати за: Порядок: Результатів:

  • Glass formation region and X-ray analysis of the glassy alloys in AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂ system 
    Halyan, V.V.; Shevchuk, M.V.; Davydyuk, G.Ye.; Voronyuk, S.V.; Kevshyn, A.H.; Bulatetsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    A region of glass formation was found during melt quenching from 1273 K in the AgGaSe₂+GeS₂<=>AgGaS₂+GeSe₂. system. It is localized along the binary GeSe₂- GeS₂ system. Characteristic parameters (Tg, Tc, Tm) were determined ...
  • Relaxation and thermoinduced processes in glassy HgSe(x)-GeSe₂(₁-x) alloys 
    Halyan, V.V.; Bozhko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Spectra of absorption in glassy HgSe(x)-GeSe₂(₁-x) (x = 42, 46, 54) alloys were studied. Sustained relaxation processes - a shift of the optical absorption edge to longer wavelength - were detected. Also observed was a ...
  • The structure of glassy HgS–GeS₂ 
    Halyan, V.V.; Davydyuk, H.Ye.; Parasyuk, O.V.; Kevshyn, A.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The glass HgS(x)-GeS2(₁₀₀-x) (0 ≤ x ≤ 50) was subjected to X-ray analysis. The radial distribution functions were calculated using the integral Fourier transformation based on X-ray scattering curves. The average interatomic ...
  • Urbach’s edge of glassy HgSe-GeSe₂ alloys: static disorder and temperature dependence of optical absorption 
    Bozhko, V.V.; Halyan, V.V.; Parasyuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Results of investigations of spectral characteristics in the fundamental absorption range for the glass-like alloys HgSe - GeSe₂ are represented. To explain the phenomenon of anomaly growth of the static disorder, the model ...