Перегляд за автором "Dvoretsky, S.A."

Сортувати за: Порядок: Результатів:

  • Activation transport under quantum Hall regime in HgTe-based heterostructure 
    Gudina, S.V.; Neverov, V.N.; Novik, E.G.; Ilchenko, E.V.; Harus, G.I.; Shelushinina, N.G.; Podgornykh, S.M.; Yakunin, M.V.; Mikhailov, N.N.; Dvoretsky, S.A. (Физика низких температур, 2017)
    We have measured the temperature (2.9 K < T < 50 K) and magnetic field (0 T < B < 9 T) dependences of longitudinal and Hall resistivities for HgCdTe/HgTe/HgCdTe system with HgTe quantum well width of 20.3 nm. The activation ...
  • Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern 
    Sizov, F.F.; Tsybrii, Z.F.; Zabudsky, V.V.; Sakhno, M.V.; Shevchik-Shekera, A.V.; Dukhnin, S.Ye.; Golenkov, A.G.; Dieguez, E.; Dvoretsky, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Two-color un-cooled narrow-gap MCT (mercury-cadmium-telluride) semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy methods on high resistivity CdZnTe or GaAs substrates, with bow-type antennas ...
  • HgTe quantum wells with inverted band structure: quantum Hall effect and the large-scale impurity potential 
    Gudina, S.V.; Arapov, Y.G.; Neverov, V.N.; Podgornykh, S.M.; Popov, M.R.; Deriushkina, E.V.; Shelushinina, N.G.; Yakunin, M.V.; Mikhailov, N.N.; Dvoretsky, S.A. (Физика низких температур, 2019)
    We report on the longitudinal and Hall resistivities of a HgTe quantum well with inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH) regime at magnetic fields up to 9 T and temperatures 2.9–50 K. The ...
  • Spin splitting of surface states in HgTe quantum wells 
    Dobretsova, A.A.; Kvon, Z.D.; Krishtopenko, S.S.; Mikhailov, N.N.; Dvoretsky, S.A. (Физика низких температур, 2019)
    We report on beating appearance in Shubnikov–de Haas oscillations in conduction band of 18–22 nm HgTe quantum wells under applied top-gate voltage. Analysis of the beatings reveals two electron concentrations at the Fermi ...