Kovalyuk, Z.D.; Duplavyy, V.Y.; Sydor, O.M.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
n-InS/p-InSe heterojunctions were obtained by annealing p-InSe samples in sulphur vapours. By means of the atomic force microscopy method, topology of InS film surface was investigated. Current-voltage characteristics of ...