Dubovyi, V.K.; Kanevsky, S.O.; Litovchenko, P.G.; Opilat, V.Ya.; Tartachnik, V.P.
(Functional Materials, 2005)
The GaP diode radiation-induced degradation has been established to be caused mainlу bу the reduction of the current carrier lifetime resulting from introduction of non-radiative deep levels of the radiation-induced defects. ...