Kondrat, O.; Popovich, N.; Dovgoshej, N.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
Ge₃₃As₁₂Se₅₅-Si(n) heterostructures with modified by bismuth atoms transition layer were obtained by the discrete thermal evaporation method. Described are formation and investigation methods for these heterostructures. ...