Mahdjoub, A.; Bouredoucen, H.; Djelloul, A.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
Metal-insulator-semiconductor (MIS) structures were produced by electron beam heating evaporation of Al₂O₃ on InP. Polyphosphate thin films with the thickness of 100 to 150 A were used to passivate the interface InP/Insulator. ...