Vlasov, A.P.; Bonchyk, A.Yu.; Fodchuk, I.M.; Barcz, A.; Swiatek, Z.T.; Zaplitnyy, R.A.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
Presented here are the results of studying the controlled doping with elements of V group of the periodic table, arsenic As and antimony Sb, of narrow gap CdxHg₁₋xTe epitaxial layers during the isothermal growth from the ...