Перегляд за автором "Bogoslovskaya, A.B."

Сортувати за: Порядок: Результатів:

  • Rudko, G.Yu.; Kovalenko, S.A.; Gule, E.G.; Bobyk, V.V.; Solomakha, V.M.; Bogoslovskaya, A.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    ZnO/porous silica nanocomposites were successfully fabricated by three different types of synthesis techniques. In all cases, the molecular sieve SBA-16 was used as a porous matrix. The in situ growth the nanoparticles of ...
  • Oleksenko, P.Ph.; Sukach, G.A.; Smertenko, P.S.; Vlaskina, S.I.; Bogoslovskaya, A.B.; Spichak, I.O.; Shin, D.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    Forward and reverse current-voltage (I-V) characteristics of light emitting diodes based on GaN epitaxial films were investigated by differential spectroscopy. This technique is based on calculating the differential slope ...
  • Rudko, G.Yu.; Kovalenko, S.A.; Gule, E.G.; Bobyk, V.V.; Solomakha, V.M.; Bogoslovskaya, A.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The nanocomposite – nanoporous silica (SBA-16) containing ZnO quantum dots – was fabricated by the sublimation method. This novel route of synthesizing ZnO nanoparticles implies physical sorption of zinc acetylacetonate ...