Перегляд за автором "Bilynskyi, I.V."

Сортувати за: Порядок: Результатів:

  • Effect of quantum dot shape of the GaAs/AlAs heterostructure on interlevel hole light absorption 
    Boichuk, V.I.; Bilynskyi, I.V.; Sokolnyk, O.A.; Shakleina, I.O. (Condensed Matter Physics, 2013)
    The effect of quantum dot shape on the hole energy spectrum and optical properties caused by the interlevel charge transition based on the 4x4 Hamiltonian has been studied for the GaAs quantum dot in the AlAs semiconductor ...
  • Hole, impurity and exciton states in a spherical quantum dot 
    Boichuk, V.I.; Bilynskyi, I.V.; Leshko, R.Ya. (Condensed Matter Physics, 2010)
    The 3x3 kp hole Hamiltonian for the wave-function envelopes (effective mass Hamiltonian) was used for calculation of discrete states of the hole and acceptor hydrogenic impurity in a spherical Si/SiO2 nanoheterostructure ...
  • Hydrogenic impurity in a bilayer spherical quantum dot 
    Boichuk, V.I.; Bilynskyi, I.V.; Leshko, R.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In the work, on the basis of the exact solution of the Poisson equation for a bilayer quantum dot with a positively charged donor ion in its centre, determined is the potential energy of interaction of this impurity ion ...
  • Interband optical transitions in spherical nanoheterostructures 
    Boichuk, V.I.; Bilynskyi, I.V.; Shakleina, I.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A spherical semiconductor nanoheterostructure of cubic symmetry is studied in the paper. Accurate solutions of the Schrödinger equation for S₁/₂, P₁/₂, P₃/₂, D₅ /₂, and D₇/₂ states of particles are found in the framework ...
  • Light absorption coefficient of an ordered array of spherical quantum dot chains 
    Boichuk, V.I.; Bilynskyi, I.V.; Pazyuk, R.I. (Condensed Matter Physics, 2017)
    We considered intersubband electron transitions in an array of one-dimensional chains of spherical quantum dots in the GaAs/AlxGa1−xAs semiconductor system. The absorption coefficient caused by these transitions was calculated ...
  • Off-central acceptor impurity in a spherical quantum dot 
    Boichuk, V.I.; Leshko, R.Ya.; Bilynskyi, I.V.; Turyanska, L.M. (Condensed Matter Physics, 2012)
    The hole energy spectrum with the ion of an acceptor impurity in the quantum dot has been calculated using the spherical approximation of the multiband Luttinger model. The dependence of the hole energy levels on the ...
  • Properties of a charge in the nanoheterosystems with quantum wells and barriers 
    Boichuk, V.I.; Bilynskyi, I.V.; Shakleina, I.O.; Holskyi, V.B. (Condensed Matter Physics, 2010)
    In the paper a quasi-one-dimensional three-layer nanowire (NW) with an intermediate layer at the separation boundaries is described by the Kronig-Penney model with δ-function potentials. The distance between the last or ...
  • Study of an Acceptor Impurity Located at the Center of a Sperical Nanoheterostructure 
    Boichuk, V.I.; Bilynskyi, I.V.; Leshko, R.Ya.; Shakleina, I.O. (2010)
    Using the spherical 4x4 Hamiltonian, the discrete states of a hydrogenic acceptor impurity in a spherical GaSb/AlSb nanoheterostructure with various quantum-dot sizes are determined. The energies obtained are compared with ...
  • The effect of polarization charges on energy of univalent and bivalent donors in a spherical quantum dot 
    Boichuk, V.I.; Bilynskyi, I.V.; Leshko, R.Ya. (Condensed Matter Physics, 2008)
    The energy of electrons of univalent and bivalent impurity of a spherical β -HgS/CdS nanoheterostructure is calculated as a function of quantum dot radius by the variation technique in the case of finite and infinite ...