Перегляд за автором "Babich, V.M."

Результати 1-3 з 3

Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors

Baranskii, P.I.; Babich, V.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)

Evolution of the physical insight into the nature of main factors that influence the energy band structure formation in semiconductors, and, hence, their basic electrophysical, optical, thermoelectrical and even mechanical ...
Mass-spectrometric investigations of gas evolution

Asnis, Yu.A.; Baranskii, P.I.; Babich, V.M.; Zabolotin, S.P.; Ptushinskii, Yu.G.; Sukretnyi, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)

Method of mass-spectrometry with time-of-flight recording of the desorbed products was used to study the gas evolution of impurities from the subsurface layer of Si crystals molten by the electron beam (of ~2 mm² area) in ...
The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation

Baranskii, P.I.; Babich, V.M.; Venger, E.F.; Dotsenko, Yu.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)

The magnetic field dependencies Dr^/r0 = f(H) were investigated for phosphorus-doped n-Si crystals at a temperature of 77.4 K in classical strong magnetic fields up to 200 kOe. We revealed and discuss some distinctions in ...

Результати 1-3 з 3

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