Перегляд за назвою

Сортувати за: Порядок: Результатів:

  • Staltsov, V.V.; Chebotarev, V.V.; Makhlaj, V.A. (Вопросы атомной науки и техники, 2015)
    The paper describes the design features of gas injectors for the axial (parallel to the axis of the accelerator) and radial (perpendicular to the axis of the accelerator) working gas supply into the accelerator channel. ...
  • Sobiyi, K.; Sigalas, I. (Сверхтвердые материалы, 2016)
    The performance of PcBN cutting tool during its application in the mass production of components made from AISI 440B stainless steel has been considered. The experimental tests have been performed at cutting speed ranging ...
  • Pokhvala, S.M.; Zhilyaev, B.E.; Reshetnyk, V.M. (Advances in Astronomy and Space Physics, 2012)
    We present the results of testing the commercial digital camera Nikon D90 with a CMOS sensor for high-speed photometry with a small telescope Celestron 11ʺ at the Peak Terskol Observatory. CMOS sensor allows to perform ...
  • Kryuchyn, A.A.; Petrov, V.V.; Rubish, V.M.; Lapchuk, A.S.; Kostyukevych, S.O.; Shepeliavyi, P.E.; Kostyukevych, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Thin films of glassy chalcogenide semiconductor are widely used as recording media in optical data storage. To obtain relief micro- and nanoscale structures on the surface of optical master discs inorganic photoresists ...
  • Mikhailov, I.F.; Baturin, A.A.; Bugaev, Ye.A.; Mikhailov, A.I.; Borisova, S.S. (Functional Materials, 2013)
    High-stable mass standards prepared as magnetron sputtered super-smooth metal layers deposited on single crystal substrates were attested. The thin film standards were found to meet the requirements to government standards: ...
  • Lysenko, V.S.; Rudenko, T.E.; Nazarov, A.N.; Kilchitskaya, V.I.; Rudenko, A.N.; Limanov, A.B.; Colinge, J.-P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
    The characteristics of enhancement-mode MOS transistors fabricated on zone-melting recrystallized (ZMR) silicon-on-insulator (SOI) films were systematically experimentally investigated in the temperature range 25–300°C. ...
  • Kiv, A.E.; Maksymova, T.I.; Moiseenko, N.V.; Soloviev, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Molecular Dynamics (MD) simulation of Si (001) surface layers was performed. In the modified algorithm of MD the potential is corrected on each step of calculation. The corrections account the re-hybridization of chemical ...
  • Gudyma, Iu.V.; Daskal, Ye.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    In the paper, spin-crossover compounds were examined from the viewpoint of perturbation theory for self-consistent field. The research carried out in the framework of the Ising-like model for these compounds. We have ...
  • Opanasyuk, A.S.; Opanasyuk, N.N.; Tirkusova, N.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The paper provides the direct experimental method to determine the localized state energy distribution function for semiconducting solid materials based on space-charge-limited current-voltage characteristics. The ...
  • Biller, E.Z.; Khodak, I.V.; Kushnir, V.A.; Mitrochenko, V.V.; M'akushko, L.K.; Stepin, D.L.; Zhiglo, V.F. (Вопросы атомной науки и техники, 2001)
    In the paper a metallic thermionic cathode with an electron beam heating to be used in RF gun is proposed. The high-temperature metallic emitter made of high-melting material will allow to decrease significantly the pulse ...
  • Komir, A.I.; Odeychuk, N.P.; Tkachenko, V.I.; Ulybkin, A.L.; Nikolaenko, A.A. (Вопросы атомной науки и техники, 2018)
    At high-temperature oxidation of nuclear graphite, the oxidant flow in the near-surface region is taken into account. Macro- and microscopic modeling of the oxidation of the near-surface layer was carried out. The calculation ...
  • Bagraev, N.T.; Grigoryev, V.Yu.; Klyachkin, L.E.; Malyarenko, A.M.; Mashkov, V.A.; Romanov, V.V.; Rul’, N.I. (Физика низких температур, 2017)
    The negative- U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the ...
  • Hellmund, M.; Janke, W. (Condensed Matter Physics, 2005)
    We discuss recently generated high-temperature series expansions for the free energy and the susceptibility of random-bond q-state Potts models on hypercubic lattices. Using the star-graph expansion technique, ...
  • Boldasov, V.S.; Kuzmichev, A.I.; Melnichenko, M.S.; Shulaev, V.M. (Вопросы атомной науки и техники, 2021)
    The kinetic simulation of high-voltage beam discharge at low pressure of nitrogen is fulfilled. The characteristics of particle flows to the tantalum cathode and back reflection of fast nitrogen atoms are calculated. The ...
  • Pachkov, A.A.; Bak, P.A. (Вопросы атомной науки и техники, 2006)
    A 10 kW power supply (PS) with smooth adjustment of the load current from zero up to 2 kA is described. The operating mode with a load current stability up to 0.1% and long-term instability of 0.01% is possible. The PS ...
  • Drozd, I.M.; Kuzmichev, A.I. (Вопросы атомной науки и техники, 2016)
    The features of operation of a high-voltage gas-discharge switch device with two control electrodes (grids) are considered. The high-density crossed fields low-pressure glow discharge of magnetron type with a cold cathode ...
  • Anokhin, R.A.; Dubniuk, S.N.; Gaponenko, N.I.; Kobets, A.P.; Kravchenko, A.I.; Manuilenko, O.V.; Reshetnikov, V.N.; Shevchenko, A.S.; Soshenko, V.A.; Svichenskiy, V.G.; Zajtsev, B.V.; Zabotin, A.V.; Zhuravlyov, V.G.; Zhuravlyov, A.V. (Вопросы атомной науки и техники, 2019)
    The high-voltage pulse modulator based on the modern semiconductor elements is described. The modulator is intended for use in the power supply system of LINAC helium ions injector and has the ability to smoothly adjust ...
  • Beloglazov, V.I.; Dyomin, V.S.; Dovbush, L.S.; Kosoj, A.I.; Shkirida, S.M.; Tur, Yu.D. (Вопросы атомной науки и техники, 2004)
    The data on developing and creating high-voltage pulse modulators for linacs with using Insulator Gate Bipolar Transistors (IGBT) and Integrated Gate Commutate Thyristors (IGCT) are presented. Comparative analysis of ...
  • Reshetnyak, N.G.; Romas’ko, V.P.; Chertishchev, I.A. (Вопросы атомной науки и техники, 2018)
    A small-sized nanosecond generator was developed to trigger a magnetron gun. A voltage pulse of amplitude up to 20 kV is applied to anode for gun triggering. Rise and fall fronts of high-voltage pulse are 20 and 70 ns ...
  • Kuznetsov, B.I.; Nikitina, T.B.; Bovdui, I.V. (Електротехніка і електромеханіка, 2019)
    Aim. The synthesis of single-circuit system of active shielding of magnetic field, generated by group of high voltage power lines, with different spatial arrangement of shielding coil. Results. Three variant of single-circuit ...