Перегляд за автором "Venger, E.F."

Сортувати за: Порядок: Результатів:

  • Intrinsic defects in nonstoichiometric B-SiC nanoparticles studied by pulsed magnetic resonance methods 
    Savchenko, D.V.; Pöppl, A.; Kalabukhova, E.N.; Venger, E.F.; Gadzira, M.P.; Gnesin, G.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Nonstoichiometric B-SiC nanoparticles (np-SiC) have been studied by electron paramagnetic resonance (EPR) and pulsed magnetic resonance methods including field swept electron spin echo (FS ESE), pulsed electron nuclear ...
  • Investigation of the undersurface damaged layers in silicon wafers 
    Holiney, R.Yu.; Matveeva, L.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The undersurface damaged layers of the silicon wafers were studied by electroreflectance method. These damaged layers could be created at cutting or standard treatment (ST) of the silicon wafers. The silicon substrates ...
  • Investigation of ZnO single crystals subjected to a high uniform magnetic field in the IR spectral range 
    Venger, E.F.; Evtushenko, A.I.; Melnichuk, L.Yu.; Melnichuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Based on the experimental data obtained, we performed the theoretical investigation of the external reflectance coefficients of uniaxial optically anisotropic polar ZnO single crystals subjected to the action of a high ...
  • Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals 
    Budzulyak, S.I.; Ermakov, V.M.; Kyjak, B.R.; Kolomoets, V.V.; Machulin, V.F.; Novoselets, M.K.; Panasjuk, L.I.; Sus', B.B.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator ...
  • Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals 
    Boltovets, N.S.; Basanets, V.V.; Ivanov, V.N.; Krivutsa, V.A.; Tsvir, A.V.; Belyaev, A.E.; Konakova, R.V.; Lyapin, V.G.; Milenin, V.V.; Soloviev, E.A.; Venger, E.F.; Voitsikhovskyi, D.I.; Kholevchuk, V.V.; Mitin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route ...
  • On the dielectric approximation in the additional light waves theory: an historical rehabilitation (recovery) 
    Piskovoi, V.N.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    After the basic Pekar papers on crystal optics with spatial dispersion (CSD) among a lot of others there was the “dielectric approximation” (DA) method. But soon it has been fully rejected because, as it was recognized by ...
  • Optical biosensors based on the surface plasmon resonance phenomenon: optimization of the metal layer parameters 
    Snopok, B.A.; Kostyukevich, K.V.; Lysenko, S.I.; Lytvyn, P.M.; Lytvyn, O.S.; Mamykin, S.V.; Zynyo, S.A.; Shepelyavyj, P.E.; Kostyukevich, S.A.; Shirshov, Yu.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Application of the evanescent wave phenomena (e.g. surface plasmon resonance) in the chemical and biochemical sensors provides both optimal conditions for registration of specific interactions and high sensitivity. At the ...
  • Peculiarities of injection phenomena in heavily doped silicon structures and development of radiation-resistant diode temperature sensors 
    Shwarts, Yu.M.; Sokolov, V.N.; Shwarts, M.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    To explain the experimental behaviour of differential characteristics (ideality factor, differential resistance) before and after radiation influence, a theoretical model of injection current flow mechanisms for the silicon ...
  • Photoluminescent films of nanocrystalline silicon doped with metals 
    Kaganovich, E.B.; Kirillova, S.I.; Manoilov, E.G.; Primachenko, V.E.; Svechnikov, S.V.; Venger, E.F.; Bazylyuk, I.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Effects of electropositive (Au, Ag, Cu) and electronegative (Al, In) metal impurities are investigated from the viewpoint of photoluminescent and electronic properties of nanocrystalline silicon films prepared by laser ...
  • Piezoelectrically active acoustic waves confined in a quantum well and their amplification by electron drift 
    Demidenko, A.A.; Kochelap, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    In [1] we have studied how the drift of two-dimensional electrons amplifies the acoustic waves confined in quantum wells. The electron-phonon interaction was considered to be due to deformation potential. Here we generalize ...
  • Probing plasmonic system by the simultaneous measurement of Raman and fluorescence signals of dye molecules 
    Dvoynenko, M.M.; Kazantseva, Z.I.; Strelchuk, V.V.; Kolomys, O.F.; Bortshagovsky, E.G.; Venger, E.F.; Tronc, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The simultaneous measurement of Raman and fluorescence signals was proposed to find out the molecule-metal distance. The ratio between Raman and fluorescence intensities was used to estimate molecule-metal distance in ...
  • Resonance generation of sum harmonic in static electric field 
    Venger, E.F.; Griban, V.M.; Melnichuk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Using the group theory considerations, we investigate the nonlinear effect tensor (NET) for a crystal in a static electric field when a harmonic or the initial emission frequency approaches that of the excitonic absorption ...
  • Reststrahlen spectroscopy of MgAl₂O₄ spinel 
    Boguslavska, N.N.; Venger, E.F.; Vernidub, N.M.; Pasechnik, Yu.A.; Shportko, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Using IR reflectance spectroscopy and surface polariton spectroscopy in the reststrahlen region, we investigated Czochralski-grown MgAl₂O₄ spinel. The computer analysis of variance made for spectra enabled us to get a ...
  • Some features of two-photon absorption in static electric field 
    Griban, V.M.; Melnichuk, O.V.; Ovander, L.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We considered the effect of static uniform electric field on the process of two-photon excitonic absorption of light in crystals. The matrix element that determines the above process was calculated using a linear (in the ...
  • Spectra of the photo-electric phenomena physically differentiated on the light absorption factor 
    Berezhinsky, L.I.; Venger, E.F.; Matyash, I.E.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The pleochroism phenomena in photoconductivity of Ge samples and gate photoelectomotive force (photo-emf) of Si samples were experimentally investigated by a polarization modulation method. Anisotropy of dielectric properties ...
  • Study of diamond-like carbon films doped with transition metals and used as cathodes for current creation in water 
    Primachenko, V.E.; Lukjanov, A.N.; Kirillova, S.I.; Chernobay, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Properties of diamond-like carbon films (DLCF) on n-Si substrates used as cathodes in Yb – DLCF (n-Si) water electrochemical system have been studied by current creation with water decomposition H2O → OH⁻ + H⁺ . The ...
  • Surface polariton excitation in ZnO films deposited using ALD 
    Venger, E.F.; Melnichuk, L.Yu.; Melnichuk, A.V.; Semikina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The conductive ZnO films deposited using atomic layer deposition (ALD) on the optical glass substrates were studied using the modified method of the disturbed total internal reflection within the range 400…1400 cm⁻¹ for ...
  • Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x 
    Venger, E.F.; Knorozok, L.M.; Melnichuk, L.Yu.; Melnichuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We consider the growth technology and investigations of indium antimonide doped concurrently with acceptor (Сd) and donor (Те) impurities taken in equiatomic ratio. The optimal modes of single crystal synthesis and ...
  • The features of magnetoresistance of n-Si doped with phosphorus from the melt and by nuclear transmutation 
    Baranskii, P.I.; Babich, V.M.; Venger, E.F.; Dotsenko, Yu.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The magnetic field dependencies Dr^/r0 = f(H) were investigated for phosphorus-doped n-Si crystals at a temperature of 77.4 K in classical strong magnetic fields up to 200 kOe. We revealed and discuss some distinctions in ...
  • The features of phonon component of linear dichroism in uniaxially strained silicon crystals 
    Serdega, B.K.; Venger, E.F.; Matyash, I.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Linear dichroism induced by uniaxial compression strain in semiconductor silicon samples was studied with modulation spectroscopy technique using modulation of electromagnetic radiation polarization. We obtained a spectral ...