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Сортувати за: Порядок: Результатів:

  • Mitropolsky, Yu.A.; Lopatin, A.K. (Український математичний журнал, 1994)
    By using a new method suggested in the first part of the present work, we study systems which become linear in the zero approximation and have perturbations in the form of polynomials. This class of systems has numerous ...
  • Mitropolsky, Yu.A.; Lopatin, A.K. (Український математичний журнал, 1994)
    We describe the technique of normalization based on the method of asymptotic decomposition in the space of representation of a finite-dimensional Lie group. The main topics of the theory necessary for understanding the ...
  • Lopatin, A.K.; Mitropolskiy, Yu.A. (Український математичний журнал, 1995)
    In this paper, we apply the theory developed in parts I-III to some classes of problems. We consider linear systems in zero approximation and investigate the problem of invariance of integral manifolds under perturbations. ...
  • Bogolyubov (jr.), N.N.; Sankovich, D.P. (2010)
    We analyze the approximating Hamiltonian method for Bose systems. Within the framework of this method, the pressure for the mean field model of an imperfect boson gas is calculated. The problem is considered by the systematic ...
  • Eliseev, V.I.; Lutsenko, V.I. (Геотехнічна механіка, 2014)
    Following general laws of heat-mass exchange in multiphase systems, common tendencies of vapor bubble and crystal dynamics and growth in a solution were studied with the assumptions that the solution medium consisted of ...
  • Jusupović, A. (Княжа доба: історія і культура, 2013)
    Володислав Кормильчич належав до найвпливовіших боярів Галицької землі першої половини XIII ст. Його високу позицію старалися тлумачити у різний спосіб, твердячи, що був спорідненим з династією Рюриковичів. Галицько-Волинський ...
  • Karachevtseva, L.A.; Lytvynenko, O.A.; Malovichko, E.A.; Sobolev, V.D.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type «In/n-Si» and «In/macroporous n-Si» were formed by thermal evaporation of indium in an atmosphere of hydrogen. Temperature ...
  • Zykova, A.V.; Dudin, S.V.; Polozhiy, K.I. (Вопросы атомной науки и техники, 2003)
    The technology of synthesis of multilayer coatings on the basis of alumina oxide and structures, like tricalcium phosphate and hydroxylapatite, was suggested by Reactive Ion-Beam Synthesis (RIBS) method in a same vacuum ...
  • Teplyuk, N.M.; Teplyuk, V.I. (Вiopolymers and Cell, 2010)
    Aim. Runx2 (AML3) transcription factor is the key regulator of osteoblastic lineage progression and is indispensable for the formation of mineral bones. Runx2 expression increases during differentiation of osteoblasts to ...
  • Маслій, Р.В.; Кулик, А.Я. (Штучний інтелект, 2011)
    У статті представлено boosting-метод виявлення облич фронтального вигляду на напівтонових зображеннях, який як прості класифікатори використовує ознаки з нового набору, отриманого шляхом поєднання локальних бінарних шаблонів ...
  • Grinyov, B.V.; Dubovik, M.F.; Tolmachev, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Literature data and results of authors' studies are rewieved concerning structure, growing conditions, non-linear optical, piezoelectric and spectral characteristics of borate single crystals Li₂B₄O₇, LiB₃O₅, b-BaB₂O₄, ...
  • Barkaszi, Z. (Праці теріологічної школи, 2017)
    The paper deals with the peculiarities of distribution of the field vole (M. agrestis) and the northern birch mouse (S. betulina) in the region of the Ukrainian Carpathians, which are the southern range edge of these ...
  • Rastelli, G. (Symmetry, Integrability and Geometry: Methods and Applications, 2016)
    We apply the Born-Jordan and Weyl quantization formulas for polynomials in canonical coordinates to the constants of motion of some examples of the superintegrable 2D anisotropic harmonic oscillator. Our aim is to study ...
  • Oganov, A.R.; Solozhenko, V.L. (Сверхтвердые материалы, 2009)
    Boron is a unique element, being the only element, all known polymorphs1 of which are superhard, and all of its crystal structures are distinct from any other element. The electron-deficient bonding in boron explains its ...
  • Vlaskina, S.I.; Vlaskin, V.I.; Podlasov, S.A.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Diffusion of boron, aluminum, and oxygen was conducted at temperatures 1600 – 1700°C. Very pure original n-SiC crystal (6H-SiC) specially grown by the Lely method annealed in oxygen during 2 h at 1700 °C, in argon during ...
  • Nemchenok, I.B.; Gundorin, N.A.; Kamnev, I.I.; Shevchik, E.A.; Shurenkova, A.A. (Functional Materials, 2013)
    The high thermal neutron capture cross-section of ¹⁰B nucleus enables to use the boron-loaded organic scintillators as a basis of the neutron detectors. The study results of the new liquid scintillator with mass concentration ...
  • Rowaid Al-khazraji; Yaqiong Li; Lifeng Zhang (Functional Materials, 2018)
    A combined method of slag refining and gas blowing technique were used for boron removal from metallurgical grade silicon and 75%wt Si-Sn alloy using the 45%CaO-45%SiO₂-10%CaCl₂ slag with the use of Ar gas and Ar-20%O₂ ...
  • Oberemok, O.; Lytvyn, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    In the present study the SNMS technique for the quantitative component analysis of the borophosphosilicate glass layers was used. These layers were deposited on the silicon substrate by chemical vapor deposition method. ...
  • Jaeck, Th.; Pulé, J.V.; Zagrebnov, V.A. (Condensed Matter Physics, 2009)
    We study a non-interacting (perfect) Bose-gas in random external potentials (traps). It is shown that a generalized Bose-Einstein condensation in the random eigenstates manifests if and only if the same occurs in the ...
  • Stasyuk, I.V.; Velychko, O.V. (Condensed Matter Physics, 2018)
    Instabilities resulting in Bose-Einstein condensation and/or modulation of “displacements” in a system of quantum particles described by a two-state Bose-Hubbard model (with an allowance for the interaction between particle ...