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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Active layer – semi-insulating substrate interface effect on GaAs MESFET components 
    Belgat, M.; Merabtine, N.; Zaabat, M.; Kenzai, C.; Saidi, Y. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    This paper describes the polarization effect of the substrate on the electric characteristics of the GaAs Metal Semiconductor Field Effect Transistor (GaAs MESFET). An analysis based on the existence of a double space ...
  • Active region of CdTe X-/γ-ray detector with Schottky diode 
    Kosyachenko, L.A.; Maslyanchuk, O.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    It has been shown from the Poisson equation that the presence of deep levels in the semiconductor bandgap influences in a complicated manner upon distribution of the space charge, potential and electrical fields in the ...
  • Adaptive cross-correlation detector for signals of optoelectronic reflective sensors 
    Bilyy, O.I.; Yaremyk, R.Y.; Kostyukevych, S.O.; Kostyukevych, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    A soft- and hardware realization of optoelectronic intellectual sensor for biomedical noninvasive studies based on the analysis of light reflected from living tissues has been described. The main feature of the developed ...
  • A determination of propagation constants of symmetric planar waveguide modes in a frequency domain 
    Fitio, V.M.; Romakh, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    In a new method of finding propagation constants of waveguide modes, the Fourier transform to wave equation is used. We change the differential equation by the integral one. Then we represent the latter equation in a ...
  • Adsorption of ions and thickness dependence of conductivity in liquid crystals 
    Kovalchuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    It is experimentally shown that, at thicknesses less than 100 μm, conductivity of planar oriented liquid crystals is a function of the thickness. The main reason for this effect is adsorption of ions on the surface of ...
  • Advanced modification of main types of excimer laser resonators 
    Baschenko, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    In the paper proposed are some simple modifications of plane-parallel and unstable telescopic resonators the most widely used in excimer lasers. These can increase output energy, density of emission power and improve the ...
  • Advanced scintillation single crystals based on complex oxides with large atomic number 
    Burachas, S.F.; Nagornaya, L.L.; Onishchenko, G.M.; Piven, L.A.; Pirogov, E.N.; Ryzhikov, V.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    An improved production technology has been developed for scintillation single crystals based on complex oxides with large atomic number – bismuth germanate (BGO), gadolinium silicate (GSO), cadmium tungstate (CWO) and lead ...
  • AES and XPS characterization of TiN layers formed and modified by ion implantation 
    Melnik, V.; Popov, V.; Kruger, D.; Oberemok, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Compositional characterization of sputtered and implanted titanium nitride (TiN) layers for microelectronics application is performed based on Auger Electron Spectroscopy (AES) and X-ray induced Photoelectron Spectroscopy ...
  • A facile route for preparation of CdS nanoparticles 
    Maleki, M.; Sasani Ghamsari, M.; Mirdamadi, Sh.; Ghasemzadeh, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    CdS nanoparticles have been synthesized by a chemical reaction route using ethylenediamine as a complexing agent. The nanoparticles were characterized using techniques such as X-ray powder diffraction (XRD), scanning ...
  • AFM study of micromorphology and microscopic growth mechanisms of Hg₁₋x CdxTe LPE epitaxial layers 
    Beketov, G.V.; Rashkovetskiy, L.V.; Rengevych, O.V.; Zhovnir, G.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Mercury cadmium telluride epitaxial layers exhibiting large areas with nearly atomically-flat surface were grown using liquid phase epitaxy (LPE) from Te-rich solution in closed system. Evolution of surface morphology ...
  • A free-space alignment technique for active optical waveguide components 
    Karim, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    In this paper an easy to use free-space alignment technique for the alignment of different active optical waveguide components is reported. This technique has successfully been implemented for the characterization of ...
  • A fresh approach to interpretation of visible photoluminescence spectra in silicon nanostructures 
    Sachenko, A.V.; Kryuchenko, Yu.V.; Manoilov, E.G.; Kaganovich, E.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    To understand both multimodal character of stationary photoluminescence (PL) spectra and observed peculiarities in time-resolved PL in low-dimensional Si structures, it is proposed to take into account an additional effect, ...
  • Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes 
    Vlasenko, N.A.; Kononets, Ya.F.; Denisova, Z.L.; Kopytko, Yu.V.; Veligura, L.I.; Soininen, El.; Tornqvist, R.O.; Vasama, K.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Electroluminescent characteristics and the photodepolarization spectra of ZnS:Mn thin-film electroluminescent devices made with two different atomic-layer epitaxy processes based on chlorine and metalorganic precursors ...
  • Algorithm of microchip operation for controlling parameters of a latex agglutination reaction 
    Bilyi, O.I.; Yaremyk, R.Y.; Kiselyov, Y.M.; Novikov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In the given work the algorithm of work and structure of microchip construction, intended for kinetics researches of formation of modular complexes is considered during the reaction of latex agglutination. The physical ...
  • All-optical signal processing in photonic structures with shifting bands 
    Glushko, E.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We propose the principal scheme of all-optical adder based on the dependence of electromagnetic spectra in photonic bandgap materials containing optically nonlinear layers on the light signal intensity. The system consisting ...
  • Allowable deviation of LC layer thickness in cholesteric LCDs 
    Rybalochka, A.; Sorokin, V.; Sorokin, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The deviation of liquid crystal (LC) layer thickness in a display cell has considerable influence on the image quality at the addressing of cholesteric liquid crystal displays (ChLCD) by different kind of dynamic drive ...
  • Alloy scattering in quantum well wire structures of semiconductor ternaries 
    Ibragimov, G.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We studied the effect of the alloy-disorder-scattering on the electron transport in a quasi-one-dimensional semiconductor. Performed were analytical calculations of the alloy-disorder-limited momentum relaxation time for ...
  • A model for non-thermal action of microwave radiation on oxide film/semiconductor structures 
    Okhrimenko, O.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    A model is considered that explains mechanism of non-thermal action of microwave radiation on the thin SiO₂ (ТiO₂, Er₂O₃, Gd₂O₃) film/SiC and SiO₂/GaAs structures. It assumes that the centers of electron-hole recombination ...
  • Amphoteric center of luminescence in CdS 
    Artem'jeva, O. O.; Vakulenko, O. V.; Dacenko, O. I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The impurity photoluminescence of cadmium sulphide crystals is studied. The luminescence intensity dependences on temperature from 80 to 300 K are obtained for the bands at 1.7 and 2 eV. The thermal curve of 1.7 eV ...
  • Amplification of localized acoustic waves by the electron drift in a quantum well 
    Demidenko, A. A.; Kochelap, V. A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    We have investigated acoustic waves in a heterostructure with a layer embedded into a semiconductor providing acoustic waves localization near the layer and electron confinement inside the layer. For layer thicknesses ...

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