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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs 
    Sorokin, V.M.; Konakova, R.V.; Kudryk, Ya.Ya.; Zinovchuk, A.V.; Bigun, R.I.; Kudryk, R.Ya.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We present a setup and procedure of studying p-n junction to case thermal resistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. A set of LEDs mounted on a metal-core printed circuit board ...
  • Technology and experimental studies of contacts for microwave diodes based on interstitial phases 
    Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Kurakin, A.M.; Milenin, V.V.; Soloviev, E.A.; Verimeychenko, G.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We consider some aspects of manufacturing technology for films of refractory metals nitrides and borides. These films are used for barrier and ohmic contacts, as well as contacts with antidiffusion layers in gallium arsenide ...
  • Technology of manufacturing the reliable silicon photoconverters with long operation time 
    Guseynov, N.A.; Askerov, Sh.Q.; Aslanov, Sh.S.; Agaev, M.N.; Gasanov, M.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We offer to use an amorphous metal alloy Al₈₀Ni₂₀ as ohmic contact and current-collecting tracks to silicon photoconverters (PC) based on p-n junctions. Technological processes for production of silicon photosensitive ...
  • Temperature changes in the excitonic absorption band in flat double nanoheterostructures GaAs/AlxGa₁₋xAs 
    Kondryuk, D.V.; Derevyanchuk, A.V.; Kramar, V.M.; Kudryavtsev, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Adduced in this paper are the method and results of theoretical studying the effects of spatial confinement and exciton-phonon interaction on the position and shape of the excitonic absorption band in flat double ...
  • Temperature changes in the excitonic absorption band in flat double nanoheterostructures GaAs/AlxGa₁₋xAs 
    Kondryuk, D.V.; Derevyanchuk, A.V.; Kramar, V.M.; Kudryavtsev, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Adduced in this paper are the method and results of theoretical studying the effects of spatial confinement and exciton-phonon interaction on the position and shape of the excitonic absorption band in flat double ...
  • Temperature changes in the function of the shape inherent to the band of exciton absorption in nanofilm of layered semiconductor 
    Derevyanchuk, A.V.; Pugantseva, O.V.; Kramar, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Represented in this paper is the method and results of theoretical investigations aimed at the influence of spatial confinement effects, self-polarization of heterojunction planes as well as exciton-phonon interaction ...
  • Temperature changes of the exciton transition energy in lead di-iodide nanofilms 
    Pugantseva, O.V.; Kramar, V.M.; Fesiv, I.V.; Kudryavtsev, O.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Adduced in this work are the results of theoretical investigations devoted to the influence of spatial confinement effects, self-polarization of heterojunction planes and exciton-phonon interaction on values of the exciton ...
  • Temperature dependence of contact resistance of Au−Ti−Pd2Si−n⁺ -Si ohmic contacts 
    Belyaev, A.E.; Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We investigated temperature dependence of contact resistance of an Au−Ti−Pd₂Si ohmic contact to heavily doped n⁺ -Si. The contact resistance increases with temperature owing to conduction through the metal shunts. In ...
  • Temperature dependence of luminescence pecularities in oxygen doped ZnTe films 
    Malushin, N.V.; Skobeeva, V.M.; Smyntyna, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Temperature dependence of luminescence intensity inherent to zinc telluride films prepared by the method of vacuum deposition and containing an oxygen impurity was investigated. The model explaining non-monotonous behaviour ...
  • Temperature dependences of SnTe linear expansion coefficient 
    Rogacheva, E.I.; Popov, V.P.; Nashchekina, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The influence of kinetic factors on the temperature dependences of the linear expansion coefficient (a) for SnTe crystals with different degrees of deviation from stoichiometry was studied. The a(T) dependences were obtained ...
  • Temperature effect on light polarization in uniaxial crystals 
    Kulish, M.R.; Litvinova, V.M.; Malysh, M.I.; Sokolovskyi, I.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    It has been shown that changes in temperature of uniaxial single crystal are accompanied by changes in the polarization plane angular position and the light intensity that subsequently passes through the polarizer, uniaxial ...
  • Temperature studies of optical parameters in (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films 
    Studenyak, I.P.; Kutsyk, M.M.; Rati, Y.Y.; Izai, V.Yu.; Kökényesi, S.; Daróci, L.; Bohdan, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films were deposited onto a silica substrate by using rapid thermal evaporation. The surfaces of the films were covered with Ag-rich crystalline micrometer-sized cones. The optical transmission ...
  • Temperature studies of optical parameters in (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films 
    Studenyak, I.P.; Kutsyk, M.M.; Rati, Y.Y.; Izai, V.Yu.; Kökényesi, S.; Daróci, L.; Bohdan, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films were deposited onto a silica substrate by using rapid thermal evaporation. The surfaces of the films were covered with Ag-rich crystalline micrometer-sized cones. The optical transmission ...
  • Template-based growth of TiO₂ nanorods by sol-gel process 
    Sadeghzadeh-Attar, A.; Sasani Ghamsari, M.; Hajiesmaeilbaigi, F.; Mirdamadi, Sh. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    In this paper, the preparation of TiO2 nanorods by sol-gel-template process has been considered. The prepared sols were characterized by using FTIR spectroscopy, and the obtained nanorods were characterized by X-ray ...
  • Testing the optical methods by using the multi-level holographic grating 
    Barchuk, О.I.; Braginets, Y.V.; Klimov, O.S.; Oberemok, Y.A.; Savenkov, S.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    In this work the interaction peculiarities of electro-magnetic optical range radiation with gratings’ surfaces are investigated. The multilevel diffractive holographic grating is proposed to be used for the polarization ...
  • The change in optical characteristics of ZnO crystals under ruby laser irradiation 
    Markevich, I.V.; Kushnirenko, V.I.; Baidullaeva, A.; Bulakh, B.M.; Pobirovskiy, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The influence of pulsed ruby laser irradiation on luminescence and optical transmission spectra of nominally undoped ZnO single crystals was investigated. Both treatment and measurements were performed at 300 K. The ...
  • The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures 
    Ievtukh, V.A.; Ulyanov, V.V.; Nazarov, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this work, the influence of elevated temperatures on charge trapping in Si nanoclusters located in oxide layer of MOS structure has been comprehensively studied. The samples with one layer of nanocrystals in the oxide ...
  • The composition effect on the bowing parameter in the cubic InGaN, AlGaN and AlInN alloys 
    Berrah, S.; Boukortt, A.; Abid, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    Numerical simulation based on FP-LAPW calculations is applied to study direct and indirect band gap energy of the cubic AlxGa₁₋xN, InxGa₁₋xN and InxAl₁₋xN alloys.The direct and indirect band-gap bowing parameter is ...
  • The current density order based on the Ginzburg-Landau description 
    Bousnane, Z.; Merabtine, N.; Benslama, M.; Bousaad, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The goal of this survey is to deduce the grandeurs, or the set of grandeurs, from which is derived simultaneously as a linear combination of densities of states, current density matrix and the reduced entropy, according ...
  • The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices 
    Ahmad, I.; Omar, A.; Mikdad, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Two doping methods for introducing phosphorus atoms into polysilicon to form a gate electrode for 0.5 mm CMOS were investigated. These methods were ion implantation and the ”in-situ” one (it is also known as thermal ...

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