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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Quadric hologram-based self-conjugation of vortex beams 
    Polyanskii, P.V.; Felde, Ch.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Self-conjugation of singular (vortex) beams by a static nonlinearly recorded hologram is reported. Diagnostics of phase-conjugated vortices is implemented using an original technique based on Young’s model of diffraction ...
  • Qualitative analysis of electron states in nanoobjects 
    Lukiyanets, B.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Tendencies of change of the electron energy states at transition from a “rigid” nanoobject to a nanoobject, in which taken into account is the influence of medium on it, are considered. Proposed is the model describing the ...
  • Quantum-chemistry calculation of BnNn-rings (n = 1-6) and fulborenes, the fullerene-like molecules BnNn (n = 12, 24, 60) 
    Sheichenko, D.M.; Pokropivny, A.V.; Pokropivny, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Electronic structure of the boron nitride rings and fullerene-like BN-molecules (the fulborenes) are calculated using MNDO, AM1, Extended Huckel, INDO and ab initio (STO-3G) methods. The fulborene B⁶⁰N⁶⁰ is confirmed as ...
  • Quantum-sized effects in oxidized silicon structures with surface II-VI nanocrystals 
    Karachevtseva, L.; Kuchmii, S.; Kolyadina, O.; Lytvynenko, O.; Matveeva, L.; Sapelnikova, O.; Smirnov, O.; Stroyuk, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The Si-SiO₂ interface in oxidized macroporous silicon structures with surface CdS and ZnO nanocrystals was investigated using the methods of electroreflectance and photoconductivity. The Franz-Keldysh effect, built-in ...
  • Quasi-active thermal control in LED street lights 
    Trofimov, Yu.V.; Lishik, S.I.; Pershukevich, P.P.; Tsvirko, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    In this paper, the hollow heat sink has been studied. The physical and mathematical model of a hollow heat sink and CFD modeling are proposed for fitting the experimental results. It has been shown that the model of a ...
  • Quaternary semimagnetic Hg₁₋x₋yCdxMnySe crystals for optoelectronic application 
    Mazur, Yu.I.; Tarasov, G.G.; Kuzmenko, E.V.; Belyaev, A.E.; Hoerstel, W.; Kraak, W.; Masselink, W.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The peculiarities of the exchange interaction between the carrier spin and localized spin moments of magnetic ions in the close vicinity of semimetal-semiconductor transition have been studied on the example of semimagnetic ...
  • Radar cross section study from wave scattering structures 
    Redadaa, S.; Boualleg, A.; Benslama, N. Merabtine M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Radar remote sensing deals with the extraction of object information from electromagnetic wave parameters. To fully exploit the potential of acquiring quantitative information requires a detailed description of the microwaves ...
  • Radiation/annealing-induced structural changes in GexAs₄₀-xS₆₀ glasses as revealed from high-energy synchrotron X-ray diffraction measurements 
    Kavetskyy, T.S.; Tsmots, V.M.; Stepanov, A.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Local atomic structure of GexAs₄₀-xS₆₀ glasses (x = 16, 24, 32, and 36) has been investigated in the -irradiated (2.41 MGy dose) and annealed after irradiation states by using the high-energy synchrotron X-ray diffraction ...
  • Radiation dynamics of injection lasers with saturating absorber in resonator 
    Manak, I.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The structure of a GaAlAs laser with saturating absorber in a resonator and a method of research of the light generation dynamics with the use of an optical stroboscopic oscilloscope OSO-1 which has a time resolution of ...
  • Radiation effects on electronic circuits in a spatial environment 
    Merabtine, N.; Benslama, M.; Benslama, A.; Sadaoui, Dj. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The failings bound to the deterioration of the components under irradiations are complex and numerous. This paper describes the different kinds of radiations present in the space as well as their interactions with the ...
  • Radiation hardness of AlAs/GaAs-based resonant tunneling diodes 
    Belyaev, A.A.; Belyaev, A.E.; Konakova, R.V.; Vitusevich, S.A.; Milenin, V.V.; Soloviev, E.A.; Kravchenko, L.N.; Figielski, T.; Wosinski, T.; Makosa, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The total dose effects of ⁶⁰Co γ-radiation on the electrical properties of double-barrier Resonant Tunneling Diodes have been studied. The devices manifest enhanced radiation hardness and conserve their operating parameters ...
  • Radiation-induced changes in infra-red spectrum of black zinc diphosphide monocrystals 
    Kudin, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    For the first time the effect of ionizing particles of different type (gamma-quanta, electrons) and neutrons upon infra-red spectra of zinc diphosphide has been studied. It was shown that the defects of phosphorus sublattice, ...
  • Radiation-induced optical darkening and oxidation effects in As₂S₃ glass 
    Kavetskyy, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The long-wave shift of fundamental optical absorption edge with decreasing the sample’s transparency in the saturation region in the As₂S₃ bulk glass (2 mm thick) due to radiation treatment by ⁶⁰Co y-quanta with the average ...
  • Radiation-induced structural changes in chalcogenide glasses as revealed from Raman spectroscopy measurements 
    Kavetskyy, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Radiation-induced structural changes in the chalcogenide glasses of (As₂S₃)x(GeS₂)₍₁₋х₎ system with x = 0.1, 0.2, 0.4, and 0.6 corresponding to the chemical compositions Ge₂₈.₁₂₅As₆.₂₅S₆₅.₆₂₅, Ge₂₃.₅As₁₁.₈S₆₄.₇, Ge₁₅.₈As₂₁S₆₃.₂, ...
  • Radiation power spectral distribution of two electrons moving in magnetic fields 
    Konstantinovich, A.V.; Melnychuk, S.V.; Konstantinovich, I.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Integral expressions for spectral distributions of the radiation power for systems of non-interacting point charged particles moving on arbitrary trajectory in electromagnetic fields in isotropic transparent media and in ...
  • Radiation-resistant ultraviolet curable polyurethane films with CdSe-ZnS сore-shell nanocrystals 
    Kulish, N.R.; Kunets, V.P.; Narsingi, K.Y.; Manasreh, M.O.; Kunets, Vas. P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The effect of proton fluence of different doses (up to 9×10¹⁵ protons/cm² ) on the absorption spectra of UV-cured polyurethane films doped by CdSe/ZnS nanocrystals has been investigated. We found that the degradation of ...
  • Radiation-stimulated processes in silicon structures with contacts based on TiN 
    Nasyrov, M.U.; Ataubaeva, A.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, ...
  • Radiation-stimulated processes in silicon structures with contacts based on TiN 
    Nasyrov, M.U.; Ataubaeva, A.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The influence of irradiation on the structural properties of titanium nitride films deposited on silicon wafers has been considered. It has been shown that depending on the energy, fluence and type of irradiation ion, ...
  • Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films 
    Gentsar, P.A.; Kudryavtsev, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The electroreflectance method based on the electrolyte technique is used for investigation of electron transitions E₀, E₀ + Δ₀ in homoepitaxial films n-GaP (111) with the electron concentration 5.7*10²³ m⁻³ before and after ...
  • Radiative recombination in BiI₃(Mn) and BiI₃(Cr) layered single crystals 
    Motsnyi, F.V.; Dorogan, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The photoluminescence spectra of BiI₃(Mn) and BiI₃(Cr) single crystals were studied. The new bands at λ = 1.1 and λ = 1.83 μm were registered at the temperature 4.2 K. It was shown that the first and second bands arise due ...

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