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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Kinoform syntesis as an improved method to form a concealed image in optical security devices 
    Braginets, E.V.; Girnyk, V.I.; Kostyukevych, S.A.; Kurashov, V.N.; Soroka, A.A.; Moskalenko, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    It is well known that one of the basic functions of security holograms is the maximal complication of their non-authorized reproduction, in other words – counterfeiting. To solve the problem, concealed images that can be ...
  • Landau parameter of elasticity 
    Merabtine, N.; Bousnane, Z.; Benslama, M.; Boussaad, F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Based on the consideration given by the Ginzburg-Landau (GL) theory according to the variational principle, we assume that the microscopic Gibbs function density given by [1] ∫VGsdV = ∫(Fs - 1/4pBH)dv must be stationary ...
  • Laser- and g-induced optical absorption of indium-doped sodium-borate glass 
    Kopyshinsky, A.V.; Okhrimenko, B.A.; Zelensky, S.E.; Danilchenko, B.O.; Shakhov, O.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The laser- and g-induced absorption spectra of indium-doped sodium-borate glass are investigated experimentally. The spectra are interpreted with the use of a model that includes three types of indium centers.
  • Laser heating effect on Raman spectra of Si nanocrystals embedded into SiOx matrix 
    Nikolenko, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Influence of combined size confinement effect and effect of local laser heating on the first-order Raman spectrum of silicon nanocrystals embedded into SiOx matrix has been studied. Increase of the local temperature ...
  • Laser – induced donor centers in p-InSb 
    Fedorenko, L.; Medvid, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The laser – induced donor centers in p-Insb have been studied by magneto-concentration effect (MCE). The distribution of donor centers in the nonequilibrium temperature field in InSb was obtained by redistribution of the ...
  • Laser-induced incandescence in aqueous carbon black suspensions: the role of particle vaporization 
    Rulik, Ju.Ju.; Mikhailenko, N.M.; Zelensky, S.E.; Kolesnik, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Non-linear properties and the kinetics of laser-induced incandescence in aqueous carbon black suspensions are investigated. For explanation of the observed properties, a model, which takes into account a decrease of the ...
  • Laser-induced incandescence of silicon surface under 1064-nm excitation 
    Kopyshinsky, A.V.; Zelensky, S.E.; Gomon, E.A.; Rozouvan, S.G.; Kolesnik, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Laser-induced incandescence (LII) of silicon surface is investigated under the excitation by a Q-switched YAG:Nd laser. With the increase of laser irradiation dose, the increase of LII signal is observed, which is attended ...
  • Laser-induced non-linear light scattering in a suspension of black-body particles 
    Zelensky, S.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Characteristics of non-linear scattering of powerful pulses of Q-switched YAG:Nd³⁺ laser in an aqueous suspension of submicron-sized black-body particles has been investigated. Proposed is a model describing the results ...
  • Laser-induced photoconductivity of ferromagnetic semiconductors 
    Semchuk, O.Yu.; Bila, R.V.; Willander, M.; Karlsteen, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The influence of a strong electromagnetic wave on the kinetic phenomena in ferromagnetic semiconductors (FMSC) is considered. To sequentialy consider this influence, we obtained quantum kinetic equations for electrons and ...
  • Laser oscillation in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism 
    Vlasenko, N.A.; Oleksenko, P.F.; Mukhlyo, M.O.; Lytvyn, P.M.; Veligura, L.I.; Denisova, Z.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The laser oscillation at room temperature in Cr²⁺:ZnS waveguide thin-film structures under electrical pumping with the impact excitation mechanism was first discovered after improvement of some waveguide optical properties. ...
  • Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells 
    Gudenko1, Yu.M.; Vainberg, V.V.; Poroshin, V.M.; Tulupenko, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The drift of charge carriers in the p-Si₀.₈₈Ge₀.₁₂/Si heterostructures under strong lateral electric fields and conditions of carrier generation by the band-to-band light absorption has been investigated experimentally. ...
  • Lateral multijunction photovoltaic cells 
    Sachenko, A.V.; Kulish, M.R.; Sokolovskyi, I.O.; Kostylyov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    In this work, features of solar cells of lateral type were analyzed. The authors offered a design of a monolithic compact solar module with cells electrically connected in series and with a dispersion element (holographic ...
  • Lattice of superconducting multilayer nanotubes as ideal high-temperature superconductor 
    Pokropivny, V.V.; Makarov, I. M.; Pokropivny, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Combining Little's and Ginzburg's ideas with recent progress in nanotubes research, a novel type of material is advanced as a perspective high-Tc superconductor on base of a close-packed lattice of quasi-1D superconducting ...
  • Layer structure formation in Hg₁₋xCdxTe films after high-frequency sonication 
    Savkina, R.K.; Sizov, F.F.; Smirnov, A.B.; Tetyorkin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Electrophysical parameters of Hg₁₋xCdxTe thin films grown by liquid-phase epitaxy and molecular-beam epitaxy were investigated before and after the high-frequency sonication ( fUS = 7.5 MHz, WUS ~ 10⁴ W/m²). It was determined ...
  • LC acousto-optical transducer for nondestructive holographic control systems 
    Oleksenko, P.; Sorokin, V.; Zelinskyy, R.; Tytarenko, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The construction of acousto-optical display based on the hysteretic in cholesteric liquid crystals (CLCs) is proposed for nondestructive holographic test systems. The influence oblique reactive sputtering deposited thin ...
  • LED lighting. Creation and application peculiarities 
    Trofimov, Yu.V.; Lishik, S.I.; Posedko, V.S.; Tsvirko, V.I.; Pautino, А.А. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    State-of-the-art condition of LED illumination engineering for street lighting, its requirements, construction technological features of its creation, optimization ways of optical, thermal and electrical luminaire ...
  • Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties 
    Bilozertseva, V.I.; Khlyap, H.M.; Shkumbatyuk, P.S.; Dyakonenko, N.L.; Mamaluy, A.O.; Gaman, D.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The results of structural investigations and electric field-induced properties of thin (40–100 nm) Li-Bi-Se films grown on glass substrates by means of the resistive evaporation technique are reported. The experimental ...
  • Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands 
    Grigorchuk, N. I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Within the framework of the dipole approximation the line-shape of light absorption for exciton transitions between broad bands in one-, two- and three-dimensional organic semiconductor structures are calculated. Exciton ...
  • Light absorption by excited exciton states in layered InSe crystals 
    Zhirko, Yu.I.; Zharkov, I.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We investigated spectra of light absorption by excitons in InSe crystals of different thicknesses, both pure and doped with iron group impurities, at temperatures from 4.5 up to 100 К. It was shown that, along with the ...
  • Light absorption by inhomogeneous semiconductor film 
    Baraban, L.; Lozovski, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Processes of light absorption by thin semiconductor film in the framework of local-field method are studied. The film is inhomogeneously implanted with O⁺ ions. A distribution of implanted layer is characterized by different ...

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