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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Data acquisition, parameter extraction and characterization of active components using integrated instrumentation system 
    Bourdoucen, H.; Zitouni, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    A data acquisition, parameter extraction and characterization system for electronic active components is presented in this paper. High sensitivity measuring equipments were used for data acquisition and effective extraction ...
  • Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence 
    Valakh, M.Ya.; Sadofyev, Yu.G.; Korsunska, N.O.; Semenova, G.N.; Strelchuk, V.V.; Borkovska, L.V.; Vuychik, M.V.; Sharibaev, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    CdSe/ZnSe structures with a quantum dot extrinsic photoluminescence band related to the defects that contain vacancies in cation sublattice has been investigated. It is shown that such defects can be localized in different ...
  • Defect reorganization induced by pulsed magnetic field in porous InP 
    Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We present results of investigations of the effect caused by weak magnetic field (B = 60 mT) in porous InP crystals of impurity-defect composition. This effect was found when studying the spectra of radiative recombination ...
  • Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers 
    Semenova, G.N.; Venger, E.F.; Korsunska, N.O.; Klad’ko, V.P.; Borkovska, L.V.; Semtsiv, M.P.; Sharibaev, M.B.; Kushnirenko, V.I.; Sadofyev, Yu.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Optical and structural properties of undoped ZnSe epilayers with thickness ranging from 0.5 to 2 mm grown by molecular beam epitaxy on GaAs (001) substrates have been investigated by depth resolved optical and X-ray methods. ...
  • Defect structure of Czochralski silicon co-implanted with helium and hydrogen and treated at high temperature - pressure 
    Wierzchowski, W.; Misiuk, A.; Wieteska, K.; Bak-Misiuk, J.; Jung, W.; Shalimov, A.; Graeff, W.; Prujszczyk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Effect of stress created by Ar hydrostatic pressure (HP) up to 1.1 GPa during annealing at the high temperature (HT) 1070 K (HT-HP treatment) on microstructure of Czochralski grown silicon co-implanted with helium and ...
  • Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe 
    Babentsov, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The defects in CdTe and CdSe nanocrystals were studied by comparing the photoluminescence spectra and cyclic voltammetry dependences, which enabled us to identify two main electron levels in CdTe and four in CdSe NCs. In ...
  • Deformation state of short-period AlGaN/GaN superlattices at different well-barrier thickness ratios 
    Kladko, V.P.; Safriuk, N.V.; Stanchu, H.V.; Kuchuk, A.V.; Melnyk, V.P.; Oberemok, A.S.; Kriviy, S.B.; Maksymenko, Z.V.; Belyaev, A.E.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Dependence of deformation characteristics changing in superlattice (SL) structures AlxGa₁₋xN/GaN with Al (~10%) on the well-barrier thickness ratio in period was studied in this work. The deformation state of SL and ...
  • Degenerate four-wave mixing in n-Ge due to intervalley redistribution of hot electrons 
    Vasetskii, V.M.; Poroshin, V.N.; Ignatenko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We have studied backward degenerate four-wave mixing at CO₂ laser wavelengths in n-type Ge. Phase conjugation due to redistribution of free electrons between equivalent valleys was observed. The effect is related to carrier ...
  • Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons 
    Konoreva, O.V.; Lytovchenko, M.V.; Malyi, Ye.V.; Petrenko, I.V.; Pinkovska, M.B.; Tartachnyk, V.P.; Shlapatska, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The study of electrical and optical characteristics of GaP LEDs irradiated with electrons (E = 2 MeV, Ф = 0…10¹⁵ cm⁻²) was performed. Especial interest was focused on appearing of S-type instability in current-voltage ...
  • Degradation processes in encapsulated ZnS: Cu powder electroluminescent phosphors 
    Popovych, K.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    In this paper we present experimental results of the studying degradation processes in electroluminescent panels, prepared from encapsulated ZnS:Cu powder phosphors and theoretical simulation of energy parameters for the ...
  • Degradation processes in LED modules 
    Sorokin, V.M.; Kudryk, Ya.Ya.; Shynkarenko, V.V.; Kudryk, R.Ya.; Sai, P.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Electrical-heat-light degradation model of a light-emitting module has been developed in this work. The Monte-Carlo method was used to calculate the reliability time of LED modules with different halfwidth of LED chip ...
  • Degree of local depolarization determined for fields of laser radiation scattered by multilayer birefringent networks of protein crystals 
    Ushenko, Yu.A.; Angelsky, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Represented in this work are theoretical basics for description of fields created by scattered coherent radiation with using the new correlation parameter – degree of local depolarization (DLD). The authors have adduced ...
  • Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration 
    Bogoboyashchyy, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    High precision measurements of intrinsic electron concentration ni in Hg₁₋xCdxTe crystals were made in broad ranges of compositions (x = 0…0.31) and temperatures (T = 77…420 К). It was found that effective mass of the ...
  • Dependence of the collision integral on electric field 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Conductivity of charged band carriers is considered for the case when collision integral evidently depends on electric field. This dependence for the case of scattering by charged impurities results in decrease of carrier ...
  • Dependence of the collision integral on electric field 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Conductivity of charged band carriers is considered for the case when collision integral evidently depends on electric field. This dependence for the case of scattering by charged impurities results in decrease of carrier ...
  • Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons 
    Dolgolenko, A.P.; Varentsov, M.D.; Gaidar, G.P.; Litovchenko, P.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    We have studied the high-resistance samples of p-Si (р00 = (3.3 ± 0.5) × × 10¹² cm⁻³ ) and n-Si (n₀ = (2.0 ± 0.3) × 10¹² cm⁻³ ) grown by the floating-zone technique after the irradiation by fast-pile neutrons at 287 ...
  • Descartes-Snell law of refraction with absorption 
    Kovalenko, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The state of the art in the theory of optical constants of matter is considered for different spectral ranges of light absorption. It is stressed that up to now no there exists no commonly accepted formula for calculation ...
  • Design and testing of iodine cells for metrological laser application 
    Negriyko, A.M.; Boyko, O.V.; Kachalova, N.M.; Khodakovskiy, V.M.; Klochko, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The design and performance of iodine vapor cells for frequency stabilized laser applications are presented. The traditional design of iodine vapor cell and special development of cell for fluorescence applications are ...
  • Designing bandpass filters in 8 – 14 μm range for Si and Ge substrates 
    Asghar, M.H.; Khan, M.B.; Naseem, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Modular bandpass spectral filter for germanium and silicon substrates in 8 – 14 μm band applications have been proposed. The design approach, similar to antireflection coating design has been adopted to make the model ...
  • Design of optical components for terahertz/sub-terahertz imaging systems 
    Shevchik-Shekera, A.V.; Dukhnin, S.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    The possibility of using the lenses with an aspherical surface for terahertz/sub-terahertz (THz/sub-THz) imaging systems has been considered. Diffraction-limited optical system of four identical plano-convex aspheric lenses ...

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