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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics за назвою

Сортувати за: Порядок: Результатів:

  • Balance model for contactless chemo-mechanical polishing of wafers 
    Grigoriev, N.N.; Kravetsky, M.Yu.; Paschenko, G.A.; Sypko, S.A.; Fomin, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We developed a physical model for polishing. It makes it possible to determine physico-chemical processes occurring at contactless chemo-mechanical polishing (CMP) of crystal surfaces. A balance equation for diffusion, ...
  • Basic peculiarities of energy band spectra within generalized kindal's model for semiconductors with one main axis 
    Chuiko, G.P.; Martyniuk, V.V.; Bazhenov, V.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The analysis of the basic features of the generalized Kildal model had been presented for the semiconductors without the center of symmetry and with one main crystal axis. It had been proved, that the Kramers’ degeneration ...
  • Behaviour of manganese impurity in β-ZnP₂ 
    Kakazej, M.; Kudin, A.; Pinkovs’ka, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Behavior of manganese impurity in black zinc diphosphide was investigated for the first time by the EPR method at room temperature. The nature of basic singularities of an EPR spectrum was determined. The defect structure ...
  • Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields 
    Taqi, A.; Diouri, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Parameterized equations have been derived using variational calculation for energy levels of Wannier excitons in 2D-parabolic quantum wells in uniform electric and magnetic fields. The formulation has been performed in ...
  • Biochemical passivation of metal surfaces for sensor application: reactive annealing of polycrystalline gold films in hydrogen sulfide atmosphere 
    Snopok, B. A.; Kostyukevych, K.V.; Beketov, G.V.; Zinio, S.A.; Shirshov, Yu.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The formation of AuxSy interfacial layer by reactive annealing of gold films in H₂S atmosphere is investigated. This seems to be a technologically favorable technique for the large-scale and low-cost fabrication of ...
  • Biomorphic SiC from peas and beans 
    Kiselov, V.S.; Yukhymchyk, V.A.; Poludin, V.I.; Tryus, M.P.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Biomorphic porous SiC ceramics produced by impregnation with liquid or vapor silicon of carbon matrices derived from peas (Pisum sativum L.) and beans (Phaseolus) precursors were investigated. Optical and scanning electron ...
  • Bipolarons in anisotropic crystals and low dimensional structures 
    Kashirina, N.I.; Mozdor, E.V.; Pashitskij, E.A.; Sheka, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    We consider a simple bipolaron approach to description of anisotropic crystals in the strongcoupling limit. We have taken into account anisotropy of effective band masses and dielectric constants of crystals. The calculations ...
  • Bi₂Te₃-хSex 〈Ag〉 (х = 0.04) nanocrystal formation 
    Aleskerov, F.K.; Kahramanov, S.K.; Asadov, М.М.; Kahramanov, K.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
    The results of experimental researches dealing with formation of nanometricsize doped (Ag) layers on the surface (0001) between Te⁽¹⁾–Te⁽¹⁾ telluride quintet layers in Bi₂Te₃-хSex 〈Ag〉 (х = 0.04) crystals under directed ...
  • Bolometric characteristics of macroporous silicon structures 
    Karachevtseva, L.A.; Lytvynenko, O.A.; Malovichko, E.A.; Sobolev, V.D.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type «In/n-Si» and «In/macroporous n-Si» were formed by thermal evaporation of indium in an atmosphere of hydrogen. Temperature ...
  • Borate single crystals for polyfunctional applications: production and properties 
    Grinyov, B.V.; Dubovik, M.F.; Tolmachev, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Literature data and results of authors' studies are rewieved concerning structure, growing conditions, non-linear optical, piezoelectric and spectral characteristics of borate single crystals Li₂B₄O₇, LiB₃O₅, b-BaB₂O₄, ...
  • Boron, aluminum, nitrogen, oxygen impurities in silicon carbide 
    Vlaskina, S.I.; Vlaskin, V.I.; Podlasov, S.A.; Rodionov, V.E.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Diffusion of boron, aluminum, and oxygen was conducted at temperatures 1600 – 1700°C. Very pure original n-SiC crystal (6H-SiC) specially grown by the Lely method annealed in oxygen during 2 h at 1700 °C, in argon during ...
  • Borophosphosilicate glass component analysis using secondary neutral mass spectrometry 
    Oberemok, O.; Lytvyn, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    In the present study the SNMS technique for the quantitative component analysis of the borophosphosilicate glass layers was used. These layers were deposited on the silicon substrate by chemical vapor deposition method. ...
  • Broadband interference filters with suppression of high reflection bands of 4-, 5- and 6-th orders 
    Pervak, V.Yu.; Poperenko, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The influence of optical constants dispersion on spectral properties of multilayer interference systems, in which spectral characteristics suppression of the adjacent bands of high reflection of 4, 5 and 6-th orders are ...
  • Cadmium phosphide as a new material for infrared converters 
    Stepanchikov, D.; Shutov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Possible use of cadmium phosphide (Cd₃P₂) for infrared converter systems has been debated. The interband absorption coefficient calculations has been executed for single crystals of n-Cd₃P₂ and interpreted in the exact ...
  • Calculated images of dislocations in crystals on section topograms 
    Novіkov, S.M.; Fodchuk, І.M.; Fedortsov, D.G.; Struk, A.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    By means of numerical solution of the Takagi equations, modeling of X-ray topographic images of deformation fields of the dislocation loops and dislocation of different types. Diffraction images created by dislocations ...
  • Calculating the electronic transmission properties of semiconducting carbon nanotube Schottky diodes with increase in diameter 
    Rashid Nizam; S. Mahdi A. Rizvi; Ameer Azam (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Transmission of twenty-four carbon nanotube geometries to form twelve intramolecular junctions between every two carbon nanotubes have been investigated numerically. The twelve carbon nanotubes are zigzag and rest carbon ...
  • Calculation of absorption coefficients of InSb₁₋xBix solid solutions 
    Vyklyuk, J.I.; Deibuk, V.G.; Rarenko, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Using local empirical pseudopotential with spin-orbit interaction taking into account the electron band structure of InSb₁₋xBix in virtual crystal approximation is calculated. For binary compounds InSb and InBi characteristic ...
  • Calculation of electron mobility and effect of dislocation scattering in GaN 
    Kundu, J.; Sarkar, C.K.; Mallick, P.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    The electron mobility of GaN has been obtained at various temperatures by the relaxation time approximation method. The effect of dislocation scattering has also been discussed and calculated alongwith other important ...
  • Calculation of Fermi level location and point defect ensemble in CdTe single crystal and thin films 
    Kosyak, V.V.; Opanasyuk, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    With the use of expressions obtained from the “first principles”, the ensemble of point defects was calculated, and the location of a Fermi level in undoped cadmium telluride single crystals and thin films depending on ...
  • Calculation of the metal reflectivity with taking polarization into consideration 
    Vakulenko, O.V.; Severin, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    Optical properties of free electrons in the conduction band of metal are considered. It is shown that the conventional Drude theory does not take shielding of the external electrical field by mobile electrons into account. ...

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