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dc.contributor.author |
Sukach, A.V. |
|
dc.contributor.author |
Tetyorkin, V.V. |
|
dc.contributor.author |
Krolevec, N.M. |
|
dc.date.accessioned |
2017-05-29T13:33:28Z |
|
dc.date.available |
2017-05-29T13:33:28Z |
|
dc.date.issued |
2010 |
|
dc.identifier.citation |
Mechanisms of carrier transport in CdTe polycrystalline films/ A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 221-225. — Бібліогр.:19 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 78.30.L |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118236 |
|
dc.description.abstract |
Cadmium telluride (CdTe) polycrystalline films grown on glass ceramic
substrates by a modified close-spaced vapor transport technique have been investigated.
The as-grown films have columnar structure with the average grain sizes about 10 μm.
The in-plain direct current conductivity as a function of temperature and electric field has
been investigated. The percolation conductivity is shown to be dominant at low
temperatures (T < 250 K). At room temperature, the dominant transport mechanism is an
activated process such as thermionic emission. The carrier transport across barriers is
influenced by traps in the surface barrier regions. The non-annealed films exhibited
stable electrical parameters and high photosensitivity during five-year storage under
laboratory conditions. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Mechanisms of carrier transport in CdTe polycrystalline films |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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