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dc.contributor.author Sukach, A.V.
dc.contributor.author Tetyorkin, V.V.
dc.contributor.author Krolevec, N.M.
dc.date.accessioned 2017-05-29T13:33:28Z
dc.date.available 2017-05-29T13:33:28Z
dc.date.issued 2010
dc.identifier.citation Mechanisms of carrier transport in CdTe polycrystalline films/ A.V. Sukach, V.V. Tetyorkin and N.M. Krolevec // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 221-225. — Бібліогр.:19 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 78.30.L
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/118236
dc.description.abstract Cadmium telluride (CdTe) polycrystalline films grown on glass ceramic substrates by a modified close-spaced vapor transport technique have been investigated. The as-grown films have columnar structure with the average grain sizes about 10 μm. The in-plain direct current conductivity as a function of temperature and electric field has been investigated. The percolation conductivity is shown to be dominant at low temperatures (T < 250 K). At room temperature, the dominant transport mechanism is an activated process such as thermionic emission. The carrier transport across barriers is influenced by traps in the surface barrier regions. The non-annealed films exhibited stable electrical parameters and high photosensitivity during five-year storage under laboratory conditions. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Mechanisms of carrier transport in CdTe polycrystalline films uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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