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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 4 за назвою

Сортувати за: Порядок: Результатів:

  • New method of apertured electromagnetic field modeling 
    Anokhov, S.; Khizhnyak, A.; Lymarenko, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Using a new wave treatment of rigorous Sommerfield’s solution for a problem of plane wave diffraction on a perfectly conductive half-plane, it was obtained the solution for a problem of plane wave diffraction on a slit and ...
  • Optical and protective properties of different type diamond and diamond-like carbon films 
    Semikina, T.V.; Shmyryeva, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Comparative analyses of diamond and diamond like carbon film optical properties prepared by laser and chemical vapor deposition methods are represented in this work. It was obtained that DF and DLC films have optical ...
  • Optical transmittance of 2D macroporous silicon structures 
    Karachevtseva, L.A.; Lytvynenko, O.O.; Malovichko, E.O.; Stronska, O.J.; Busaneva, E.V.; Gorchinsky, O.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Optical transmittance by 2D macroporous silicon structures was investigated in direction parallel to pores. Absolute photonic band gap was measured for wavelengths between one and two optical periods of macroporous silicon ...
  • Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system 
    Konakova, R.V.; Milenin, V.V.; Voitsikhovskyi, D.I.; Kamalov, A.B.; Kolyadina, E.Yu.; Lytvyn, P.M.; Lytvyn, O.S.; Matveeva, L.A.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, ...
  • Raman scattering of light in biaxial monocline β-ZnP₂ crystals 
    Gubanov, V.O.; Kulakovs’kij, V.D.; Poveda, R.A.; Yanchuk, Z.Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In this paper we represent for the first time observed experimental data on non-resonant Raman scattering in a plate of β-ZnP₂. The high-frequency part of RS spectra КР β-ZnP₂ is determined by oscillations of sites in ...
  • Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact 
    Shekhovtsov, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We investigated transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for Ge-GaAs heterostructures and NbN-GaAs Schottky ...
  • SPR-spectroscopy of protein molecules adsorbed in microwave field 
    Berezhinsky, L.I.; Chegel', V.I.; Shirshov, Yu.M.; Dovbeshko, G.I.; Melnichuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    A possibility to use surface plasmon resonance (SPR) in the investigations of the microwave radiation influence upon proteins in the process of their adsorption on the gold surface and their interaction with other proteins. ...
  • Study of postimplantation annealing of SiC 
    Avramenko, S.F.; Kiselev, V.S.; Romanyuk, B.N.; Valakh, M.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The implanted layer resistance R/□ thermoelectromotive force, optical transmittance T and open-circuit photovoltage measurements were made on epitaxial n-type 6H-SiC samples and Lely-grown 6H-SiC crystals implanted at 30o ...
  • The impact of laser shock waves on anodic oxide - compound semiconductor interface 
    Yakovyna, V.S.; Berchenko, N.N.; Nikiforov, Yu.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The present work shows that the induced positive charge value at the anodic oxide -HgCdTe (AO-MCT) interface reaches its constant value (6.0±1.0)•10¹¹ cm⁻² under laser shock wave (LSW) treatment. We demonstrate that this ...
  • The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating 
    Agueev, O.A.; Svetlichny, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In the work a complex analysis of the influence of size of components and heating temperature upon stresses and defect formation in substrates of the Si-SiO₂ structures is done. It is determined that alteration of shape ...
  • Thickness dependences of optical constants for thin layers of some metals and semiconductors 
    Kovalenko, S.A.; Lisitsa, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The review comprises investigations devoted to determination of refractive index and absorption coefficient dependences on thickness for thin films of metals and atomic semiconductors. It has been shown that erroneous ...

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