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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 4 за назвою

Сортувати за: Порядок: Результатів:

  • Semchuk, O.Yu.; Veskliarskii, R.Z.; Kosharskii, K.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Nonlinear optical phenomena in ferromagnetic semiconductor with dynamic grating created by coherent light beams are investigated. A high-frequency current and nonlinear absorption coefficient are calculated. It is shown ...
  • Lysak, V.V.; Sukhoivanov, I.A.; Petrov, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We present the numerical calculation of N-order chirping mirrors with chirping both high and low refractive index layers using the transfer matrix method. The group delay and group delay dispersion are investigated for ...
  • Pashayev, A.M.; Gadjiyev, A.R.; Tagiyev, T.B.; Abbasova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The paper represents results of investigation in the wide temperature interval (4.2…300) K of hopping conductivity in GaSe single crystals doped by cadmium impurities (0.01 and 0.1 atomic percent) during crystal growing. ...
  • Grigorchuk, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The manifestation of phonon dispersion on frequency and temperature dependence of exciton damping is investigated theoretically for the models of crystal with the large and small exciton radii. The correlation between the ...
  • Baschenko, S.M.; Gochelashvili, K.S.; Zakirov, R.M.; Klimov, V.I.; Mikhkelsoo, V.T.; Prokhorov, O.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Aluminium components of products escaped from the surface of a sapphire target being illuminated by VUV emission of an ArF* laser are investigated using the method of laser-induced fluorescence combined with the transient ...
  • Evtukh, A.A.; Litovchenko, V.G.; Oberemok, A.S.; Popov, V.G.; Rassamakin, Yu.V.; Romanyuk, B.N.; Volkov, S.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The processes of gettering the recombination-active impurities in multicrystalline silicon were investigated using methods of mass spectrometry of neutral atoms with the depth profile analysis and spectroscopy of a surface ...
  • Berezhinsky, L.I.; Dovbeshko, G.I.; Obukhovsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Changes (ΔR) of amino acid crystals infrared (IR) reflectance (R) induced by simultaneous irradiation of IR and microwaves (MW) or extremely high frequency (EHF) radiation have been observed. It was shown that under the ...
  • Anokhov, S.; Khizhnyak, A.; Lymarenko, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Using a new wave treatment of rigorous Sommerfield’s solution for a problem of plane wave diffraction on a perfectly conductive half-plane, it was obtained the solution for a problem of plane wave diffraction on a slit and ...
  • Semikina, T.V.; Shmyryeva, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Comparative analyses of diamond and diamond like carbon film optical properties prepared by laser and chemical vapor deposition methods are represented in this work. It was obtained that DF and DLC films have optical ...
  • Karachevtseva, L.A.; Lytvynenko, O.O.; Malovichko, E.O.; Stronska, O.J.; Busaneva, E.V.; Gorchinsky, O.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Optical transmittance by 2D macroporous silicon structures was investigated in direction parallel to pores. Absolute photonic band gap was measured for wavelengths between one and two optical periods of macroporous silicon ...
  • Konakova, R.V.; Milenin, V.V.; Voitsikhovskyi, D.I.; Kamalov, A.B.; Kolyadina, E.Yu.; Lytvyn, P.M.; Lytvyn, O.S.; Matveeva, L.A.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, ...
  • Gubanov, V.O.; Kulakovs’kij, V.D.; Poveda, R.A.; Yanchuk, Z.Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In this paper we represent for the first time observed experimental data on non-resonant Raman scattering in a plate of β-ZnP₂. The high-frequency part of RS spectra КР β-ZnP₂ is determined by oscillations of sites in ...
  • Shekhovtsov, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We investigated transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for Ge-GaAs heterostructures and NbN-GaAs Schottky ...
  • Berezhinsky, L.I.; Chegel', V.I.; Shirshov, Yu.M.; Dovbeshko, G.I.; Melnichuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    A possibility to use surface plasmon resonance (SPR) in the investigations of the microwave radiation influence upon proteins in the process of their adsorption on the gold surface and their interaction with other proteins. ...
  • Avramenko, S.F.; Kiselev, V.S.; Romanyuk, B.N.; Valakh, M.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The implanted layer resistance R/□ thermoelectromotive force, optical transmittance T and open-circuit photovoltage measurements were made on epitaxial n-type 6H-SiC samples and Lely-grown 6H-SiC crystals implanted at 30o ...
  • Yakovyna, V.S.; Berchenko, N.N.; Nikiforov, Yu.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The present work shows that the induced positive charge value at the anodic oxide -HgCdTe (AO-MCT) interface reaches its constant value (6.0±1.0)•10¹¹ cm⁻² under laser shock wave (LSW) treatment. We demonstrate that this ...
  • Agueev, O.A.; Svetlichny, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In the work a complex analysis of the influence of size of components and heating temperature upon stresses and defect formation in substrates of the Si-SiO₂ structures is done. It is determined that alteration of shape ...
  • Kovalenko, S.A.; Lisitsa, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The review comprises investigations devoted to determination of refractive index and absorption coefficient dependences on thickness for thin films of metals and atomic semiconductors. It has been shown that erroneous ...

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