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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 1 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 1 за назвою

Сортувати за: Порядок: Результатів:

  • Serdega, B.K.; Nikitenko, E.V.; Prikhodenko, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Using the optical-polarization technique with polarization modulation, we measured stresses due to surface tension in a single-crystalline silicon sample. Optical anisotropy distribution along the normal to the sample ...
  • Karachevtseva, L.A.; Lytvynenko, O.A.; Malovichko, E.A.; Sobolev, V.D.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The dependencies of electron conductivity, concentration and mobility on pore size and concentration were investigated for macroporous silicon structures. The electron conductivity and concentration in two-layer structures ...
  • Kirillova, S.I.; Primachenko, V.E.; Venger, E.F.; Chernobai, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We used measurements of temperature and electric field dependencies of surface photovoltage to study electronic properties of (100) n-silicon surface after its thermal and chemical oxidation, as well as after oxide films ...
  • Monastyrskii, L.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The thermostimulated depolarization (TSD) spectra of porous silicon (PS) in the range of temperatures 77 - 450 K were investigated. Several wide bands of TSD current with different values referred to different types of PS ...
  • Snopok, B.A.; Kostyukevich, K.V.; Lysenko, S.I.; Lytvyn, P.M.; Lytvyn, O.S.; Mamykin, S.V.; Zynyo, S.A.; Shepelyavyj, P.E.; Kostyukevich, S.A.; Shirshov, Yu.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Application of the evanescent wave phenomena (e.g. surface plasmon resonance) in the chemical and biochemical sensors provides both optimal conditions for registration of specific interactions and high sensitivity. At the ...
  • Lytvyn, O.S.; Khomchenko, V.S.; Kryshtab, T.G.; Lytvyn, P.M.; Mazin, M.O.; Prokopenko, I.V.; Rodionov, V.Ye.; Tzyrkunov, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    X-ray and atomic force microscopy techniques were used for investigations of crystalline structure and nano-morphology of ZnS:Cu thin films. The films were deposited by electron beam evaporation on substrates of various ...
  • Kostyukevych, S.A.; Moskalenko, N.L.; Shepeliavyi, P.E.; Girnyk, V.I.; Tverdokhleb, I.V.; Ivanovsky, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Modern holographic protective elements used as emblems against counterfeiting are being more complicated as they should oppress criminal world. 2D, 3D, 3D rainbow holograms or simple diffraction structures protecting ...

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