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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 4 за назвою

Сортувати за: Порядок: Результатів:

  • Tomashik, Z.F.; Lukiyanchuk, E.M.; Tomashik, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Dissolution of CdTe and CdxHg₁–xTe single crystals by using solutions of H₂O₂– HCl–tartaric acid system has been studied. The surfaces of equal etching rates were constructed and the limiting stages of the dissolution ...
  • Asghar, M.H.; Khan, M.B.; Naseem, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Modular bandpass spectral filter for germanium and silicon substrates in 8 – 14 μm band applications have been proposed. The design approach, similar to antireflection coating design has been adopted to make the model ...
  • Kolomzarov, Yu.; Oleksenko, P.; Sorokin, V.; Tytarenko, P.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Elements of technology to produce liquid crystal (LC) light shutters for a welding automatic mask with the built-in transparent heater for operating LC layer were developed. Experimental samples of light shutters were ...
  • Abouelaoualim, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The parallel and perpendicular electron mobilities in a GaAs-Al₀.₄₅ Ga₀.₅₅As superlattice have been calculated. The scattering of electrons by confined longitudinal optical phonons was taken into account. Using the quantum ...
  • Kovalyuk, Z.D.; Sydor, O.M.; Netyaga, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Photosensitive heterojunctions were created by the method of optical contact of layered semiconductor InSe to CuInSe₂ plates. Due to high quality of contacting surfaces, a strong and enough perfect electrical junction is ...
  • Yodgorova, D.M.; Karimov, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Growing the epitaxial layers that contain the aluminium or indium has its specific features. So, the epitaxial layers prepared using the method of liquid-phase epitaxy at high (0.1 to 0.2 at. %) contents of a replacing ...
  • Ostapov, S.E.; Rarenko, I.M.; Tymochko, M.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    This paper presents theoretical and experimental investigations of narrow-gap semiconductors HgMnTe and HgCdMnTe. It has been shown that the comparison of temperature dependencies of the conductivity and Hall coefficient ...
  • Mateleshko, N.; Mitsa, V.; Stronski, A.; Veres, M.; Koos, M.; Andriesh, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this report, the comparative analysis using Raman spectroscopy of the short-range order in amorphous As₂S₃ films deposited with different evaporation rates, volume glass and fiber based on this glass is presented. With ...
  • Maronchuk, I.E.; D’yachenko, A.M.; Minailov, A.I.; Kurak, V.V.; Chorny, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Peculiarities of the crystallization processes forming the structures with quantum dots (QD) by the method of pulse cooling of saturated solution-melt were considered. A theoretical model of QD formation was developed, and ...
  • Zhirko, Yu.I.; Zharkov, I.P.; Kovalyuk, Z.D.; Pyrlja, M.M.; Boledzyuk, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Exciton absorption spectra of layered InSe and GaSe crystals electrochemically intercalated by hydrogen were investigated. It was found that the observed at T = 80 K non-monotonic shift of the exciton absorption peak n = ...
  • Yukhymchuk, V.O.; Dzhagan, V.M.; Klad’ko, V.P.; Lytvyn, O.S.; Machulin, V.F.; Valakh, M.Ya.; Yaremko, A.M.; Milekhin, A.G.; Krasil’nik, Z.F.; Novikov, A.V.; Mestres, N.; Pascual, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Multilayers with SiGe nanoislands grown in a broad temperature range (300-600 °C) are studied using Raman spectroscopy, HRXRD and AFM. It is shown that the islands are fully strained when obtained at 300 °C and gradually ...
  • Rudko, G.Yu.; Vorona, I.P.; Indutnyy, I.Z.; Ishchenko, S.S.; Shepeliavyi, P.E.; Yukhymchuk, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The correlation between the photoluminescence and paramagnetic defects is studied in SiOx films grown by vacuum thermal deposition and annealed at 750 ⁰C. The as-grown samples exhibit a wide structureless EPR line centered ...
  • Karachevtseva, L.A.; Onischenko, V.F.; Karas, M.I.; Dandur’yants, O.I.; Sizov, F.F.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Photoelectrical properties of macroporous silicon structures were investigated in the near infrared spectral range (1 to 8 μm). Angular dependences of photoconductivity, its amplification, realization of the single-mode ...
  • Mahdjoub, A.; Bouredoucen, H.; Djelloul, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Metal-insulator-semiconductor (MIS) structures were produced by electron beam heating evaporation of Al₂O₃ on InP. Polyphosphate thin films with the thickness of 100 to 150 A were used to passivate the interface InP/Insulator. ...
  • Merabtine, N.; Benslama, M.; Benslama, A.; Sadaoui, Dj. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The failings bound to the deterioration of the components under irradiations are complex and numerous. This paper describes the different kinds of radiations present in the space as well as their interactions with the ...
  • Motsnyi, F.V.; Dorogan, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The photoluminescence spectra of BiI₃(Mn) and BiI₃(Cr) single crystals were studied. The new bands at λ = 1.1 and λ = 1.83 μm were registered at the temperature 4.2 K. It was shown that the first and second bands arise due ...
  • Kostyukevych, S.A.; Morozovska, A.N.; Minko, V.I.; Shepeliavyi, P.E.; Kudryavtsev, A.A.; Rubish, V.M.; Rubish, V.V.; Tverdokhleb, I.V.; Kostiukevych, A.S.; Dyrda, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    High efficient holographic diffraction gratings with spatial frequencies from 600 to 3600 mm⁻¹ have been recorded using As₄₀S₆₀–хSeх (х = 0, 10, 20) photoresist layers and He-Cd laser operating at the wavelength λ = 440 ...
  • Karimov, A.V.; Yodgorova, D.M.; Yakubov, E.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Goffered photoreceiver surface in active regions perspective for manufacturing photosensitive structures can be form by chemical and epitaxial technology. Microreliefs are created on initial surface of semiconductor material ...
  • Berezhinsky, L.I.; Venger, E.F.; Matyash, I.E.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The pleochroism phenomena in photoconductivity of Ge samples and gate photoelectomotive force (photo-emf) of Si samples were experimentally investigated by a polarization modulation method. Anisotropy of dielectric properties ...
  • Markevich, I.V.; Kushnirenko, V.I.; Baidullaeva, A.; Bulakh, B.M.; Pobirovskiy, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The influence of pulsed ruby laser irradiation on luminescence and optical transmission spectra of nominally undoped ZnO single crystals was investigated. Both treatment and measurements were performed at 300 K. The ...

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