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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 4 за назвою

Сортувати за: Порядок: Результатів:

  • Conductance relaxation in Langmuir-Blodgett manganese phthalocyanine (PcMn) films in inhomogeneous electrical field 
    Kazantseva, Z.; Kislyuk, V.; Kozyarevych, I.; Lozovski, V.; Tretyak, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The conductance relaxation of Langmuir-Blodgett films of manganese phthalocyanine in inhomogeneous electrical field was studied. Inhomogeneous electrical field was achieved by using the lateral surface of reverse-biased ...
  • Electron properties of semiconductor surface studied by the electroreflectance spectroscopy method 
    Gentsar, P.A.; Vlasenko, A.I.; Kudryavtsev, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Relations between the Keldysh-Franz oscillations with electron parameters of semiconductor materials were used to derive qualitative data for homoepitaxial films n-GaAs (100) from their electroreflectance spectra. The ...
  • Electron states at the Si–SiO₂ boundary (Review) 
    Primachenko, V.E.; Kirillova, S.I.; Venger, E.F.; Chernobai, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    This review is aimed at analysis of the system of discrete and continuously distributed boundary electron states (BES) on (111) and (100) silicon surfaces in the Si-SiO₂ structures prepared mainly using thermal oxidation ...
  • Influence of polarization azimuth on twophoton absorption in CdS 
    Kulish, N.R.; Lisitsa, M.P.; Malysh, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    To study the dependence of the two-photon absorption coefficient β on a polarization azimuth ϕ we used the method of one light source at the ruby laser frequency. It was shown that β changes smoothly with increasing ϕ ...
  • Interband optical transitions in spherical nanoheterostructures 
    Boichuk, V.I.; Bilynskyi, I.V.; Shakleina, I.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A spherical semiconductor nanoheterostructure of cubic symmetry is studied in the paper. Accurate solutions of the Schrödinger equation for S₁/₂, P₁/₂, P₃/₂, D₅ /₂, and D₇/₂ states of particles are found in the framework ...
  • Investigation of cadmium telluride films on silicon substrate 
    Odarych, V.A.; Sarsembaeva, A.Z.; Sizov, F.F.; Vuichyk, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Properties of cadmium telluride films on silicon substrate, distribution of thickness and refraction index over the sample area were investigated by the ellipsometric method. It was ascertained that the refraction index ...
  • Investigation of growing the Hg₁₋x₋y₋zAxByCzTe solid solutions by modified zone melting method 
    Gorbatyuk, I.N.; Zhikharevich, V.V.; Ostapov, S.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    This paper presents research of the process for growing the crystals of semiconductor solid solutions Hg₁₋x₋y₋zAxByCzTe under conditions of a modified zone melting.
  • LC acousto-optical transducer for nondestructive holographic control systems 
    Oleksenko, P.; Sorokin, V.; Zelinskyy, R.; Tytarenko, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The construction of acousto-optical display based on the hysteretic in cholesteric liquid crystals (CLCs) is proposed for nondestructive holographic test systems. The influence oblique reactive sputtering deposited thin ...
  • Magnetic field effect on the binding energy of a hydrogenic impurity in GaAs-Ga₁₋xAlxAs superlattice 
    Abouelaoualim, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The binding energy of shallow hydrogenic impurity in GaAs-GaAs-Ga₁₋xAlxAs superlattices, under the influence of magnetic field, is theoretically studied following a variational procedure within the effective-mass approximation ...
  • New technological possibilities to prepare InP epitaxial layers, as well as ohmic and barrier contacts to them, and the properties of microwave diodes made on their basis 
    Arsentyev, I.N.; Bobyl, A.V.; Tarasov, I.S.; Shishkov, M.V.; Boltovets, N.S.; Ivanov, V.N.; Kamalov, A.B.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, O.S.; Lytvyn, P.M.; Markovskiy, E.P.; Milenin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A novel technological approach to fabrication of n-InP autoepitaxial films LPE-grown on porous n⁺-InP substrates, as well as ohmic and barrier contacts to them using (quasi)amorphous TiBx interstitial phases, is proposed. ...
  • Nonparabolicity effects on electron-confined LO-phonon scattering rates in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice 
    Abouelaoualim, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We investigate theoretically the effect of nonparabolic band structure on the electron-confined LO-phonon scattering rate in GaAs-Al₀.₄₅Ga₀.₅₅As superlattice. Using the quantum treatment, the new wave function of electron ...
  • Novel technological possibilities for growth of GaAs autoepitaxial films, and properties of Gunn diodes made on their basis 
    Belyaev, A.E.; Bobyl, A.V.; Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Konnikov, S.G.; Kudryk, Ya.Ya.; Markovskiy, E.P.; Milenin, V.V.; Rudenko, E.M.; Tereschenko, G.F.; Ulin, V.P.; Ustinov, V.M.; Tsirlin, G.E.; Shpak, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The n⁺-n-n⁺-n⁺⁺-GaAs epitaxial structures were MBE-grown on porous nanostructured and traditional (standard) heavily doped n⁺⁺-GaAs substrates. On their basis, we fabricated the Gunn diodes generating power output in the ...
  • Optical properties of p-type porous GaAs 
    Kidalov, V.V.; Beji, L.; Sukach, G.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Samples of p-type porous GaAs was obtained by electrochemical anodization of (100) oriented p-type GaAs. The formation of porous structure has been confirmed by Raman spectroscopy and scanning electron microscopy investigations. ...
  • p-n junctions obtained in (Ge₂)x(GaAs)₁₋x varizone solid solutions by liquid phase epitaxy 
    Sapaev, B.; Saidov, A.S.; Sapaev, I.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    (Ge₂)x(GaAs)₁₋x graded gap layers were grown using the method of liquid phase epitaxy on GaAs substrates. Investigated are distributions of chemical components along the thickness of the epitaxial layer. In accord to the ...
  • Polymorphism in chalcogenides of alkalineearth metals 
    Drozdov, V.А.; Pozhivatenko, V.V.; Drozdov, М.А.; Kovalchuk, V.V.; Moiseev, L.M.; Moiseeva, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Calculations of structural phase transitions В1 - В2 under pressure in chalcogenides of alkaline-earth metals were carried out on the basis of approach of the local density functional theory, where as a fitting used was ...
  • Porous nanostructured InP: technology, properties, application 
    Arsentyev, I. N.; Bobyl, A.B.; Konnikov, S.G.; Tarasov, I.S.; Ulin, V.P; Shishkov, M.V.; Boltovets, N.S.; Ivanov, V.N.; Belyaev, A.E.; Konakova, R.V.; Kudryk, Ya.Ya.; Kamalov, A.B.; Lytvyn, P.M.; Markovskiy, E.P.; Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP ...
  • Some physical properties of Si₁₋xGex solid solutions using pseudo-alloy atom model 
    Jivani, A.R.; Trivedi, H.J.; Gajjar, P.N.; Jani, A.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Some electronic, thermodynamical and mechanical properties of Si1-xGex solid solution with an arbitrary (atomic) concentration (x) are studied using the pseudo-alloy atom model. This work is based on the pseudopotential ...
  • The structure of glassy HgS–GeS₂ 
    Halyan, V.V.; Davydyuk, H.Ye.; Parasyuk, O.V.; Kevshyn, A.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The glass HgS(x)-GeS2(₁₀₀-x) (0 ≤ x ≤ 50) was subjected to X-ray analysis. The radial distribution functions were calculated using the integral Fourier transformation based on X-ray scattering curves. The average interatomic ...
  • Unstable mixing regions in II-VI quaternary solid solutions 
    Deibuk, V.G.; Dremlyuzhenko, S.G.; Ostapov, S.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The miscibility gaps and critical temperatures of the spinodal decompositions of the quaternary semiconducting epitaxial thin films CdMnHgTe and ZnMnHgTe have been calculated. Fitting the spinodal isotherms calculated from ...
  • Zn and Mn impurity effect on electron and luminescent properties of porous silicon 
    Primachenko, V.E; Kirillova, S.I.; Manoilov, E.G.; Kizyak, I.M.; Bulakh, B.M.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Investigated in this work are por-Si/n-Si structures prepared by anodizing silicon in 1 % HF water solution, which was followed by natural aging in air and doping with Zn and Mn impurities. When aging, the oxide film of ...

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