Misiuk, A.; Barcz, A.; Ulyashin, A.; Antonova, I.V.; Prujszczyk, M.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O
prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was
investigated after annealing of Si:O at temperatures up ...