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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 2 за назвою

Сортувати за: Порядок: Результатів:

  • Dmitruk, N.L.; Borkovskaya, O.Yu.; Havrylenko, T.S.; Naumenko, D.O.; Petrik, P.; Meza-Laguna, V.; Basiuk, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Fullerene C₆₀ films were grown using physical vapor deposition on Si substrates at room temperature. Then chemical modification with cross-linking these films was performed using the reaction with 1,8-octanediamine (DA) ...
  • Borkovska, L.V.; Stara, T.R.; Korsunska, N.O.; Pechers’ka, К.Yu.; Germash, L.P.; Bondarenko, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Effect of post-growth thermal annealing within the temperature range 200 to 430 ºC for 15 min on the luminescent characteristics of CdSe/ZnSe quantum dot (QD) heterostructure was studied. Annealing at lower temperatures ...
  • Rybalochka, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Using the standard waveform composition method for 2+2 dynamic drive schemes results in the dependence of image contrast on image data-content. In this paper, an implementation of this standard method with doubling the ...
  • Dmitriev, S.M.; Dick, V.P.; Kostyuk, N.N.; Dick, T.A.; Loiko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Polymermethacrylate (PMMA) and polyvinyl butyral (PVB) thin films with the dispersed liquid crystal droplets are prepared by the described technique. The measurements of light wave polarization-independent phase shift ...
  • Grytsenko, K.; Doroshenko, T.; Kolomzarov, Yu.; Lytvyn, O.; Serik, M.; Tolmachev, O.; Slominski, Yu.; Schrader, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Searching new more effective materials for organic electroluminescent displays is continuing. The polymethine dyes is a class of organic materials that are very interesting for these purposes. Films of the polymethine ...
  • Misiuk, A.; Barcz, A.; Ulyashin, A.; Antonova, I.V.; Prujszczyk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was investigated after annealing of Si:O at temperatures up ...
  • Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Mobility of band carriers scattered on donors, partially ionized, partially neutral, at low temperatures, is considered in general and calculated for AIII-BV group crystals. It is shown that temperature dependence of ...
  • Bushma, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    System representation in view of information security for otoelectronic ergatic means is formed. Analytical description in the matrix form for corresponding systems is received. Properties of the received bidimensional ...
  • Trofimov, Yu.V.; Lishik, S.I.; Posedko, V.S.; Tsvirko, V.I.; Pautino, А.А. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    State-of-the-art condition of LED illumination engineering for street lighting, its requirements, construction technological features of its creation, optimization ways of optical, thermal and electrical luminaire ...
  • Sukach, A.V.; Tetyorkin, V.V.; Krolevec, N.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Cadmium telluride (CdTe) polycrystalline films grown on glass ceramic substrates by a modified close-spaced vapor transport technique have been investigated. The as-grown films have columnar structure with the average ...
  • Timofeyev, V.I.; Faleyeva, E.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Heterostructure transistors with quantum dots (QD) are now very perspective devices because of their higher velocities of electrons in the channel. Simulation results for concentration and carrier velocity distributions ...
  • Prudnikava, A.L.; Fedotova, J.A.; Kasiuk, J.V.; Shulitski, B.G.; Labunov, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    This paper is devoted to the investigation of phase composition of the magnetic filler located inside multi-wall carbon nanotubes (CNTs) using Mössbauer spectroscopy, scanning electron microscopy (SEM) and transmission ...
  • Efremov, A.A.; Lytvyn, P.M.; Anishchenko, А.O.; Dyachyns’ka, O.M.; Aleksyeyeva, T.A.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The paper presents an overview and analysis of the most reliable and at the same time rather simple theoretical models describing liquid nanomeniscus geometry and forces occurring between atomic force microscope (AFM) ...
  • Автор відсутній (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    23 April 2010 is the jubilee date in life of Academician of NAS of Ukraine Machulin Volodymyr Fedorovych: he has reached 60-year age.
  • Torgova, S.; Pozhidaev, E.; Lobanov, A.; Minchenko, M.; Khlebtsov, B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Composites consisting of nematic liquid crystal (5-CB) and gold nanorods have been elaborated and investigated with a polarizing microscope. It was detected that the nanorods form inside the oriented liquid crystal matrix ...
  • Muravsky, A.A.; Agabekov, V.E.; Tolstik, A.L.; Mahilny, U.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The simple design of liquid-crystal lenses with single electrode and operation voltage below 5 V is highly desired. We offer a new type of photoaligned liquid-crystal lens, where the refractive gradient is created by ...
  • Grytsenko, K.; Kolomzarov, Yu.; Lytvyn, O.; Doroshenko, T.; Strelchuk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Gold nanoclusters were obtained by co-deposition of and polytetrafluoroethylene (PTFE) in vacuum with various gold concentrations. The films deposited were undergone to heating at various temperatures in air. Transformation ...
  • Fodchuk, І.М.; Dovganyuk, V.V.; Litvinchuk, Т.V.; Kladko, V.P.; Slobodian, М.V.; Gudymenko, O.Yo.; Swiatek, Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Structural changes in silicon single crystals irradiated with high-energy electrons (Е = 18 MeV) were studied. The peculiarities of diffraction reflection curve behaviour and changes in the profiles of isodiffusion lines ...
  • Bachinsky, V.T.; Ushenko, Yu.O.; Tomka, Yu.Ya.; Dubolazov, O.V.; Balanets’ka, V.O.; Karachevtsev, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Considered in this paper are the possibilities of local wavelet analysis for polarization-inhomogeneous images inherent to blood plasma of healthy and oncologically ill patients. Determined is the set of statistical, ...
  • Momot, N.; Zabudsky, V.; Tsybrii, Z.; Apats’ka, M.; Smoliy, M.; Dmytruk, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    In this paper, the experimental study of the terahertz and subterahertz hot electron bolometer based on narrow-gap semiconductor compound Hg₁₋xCdxTe is presented. The measurements were performed in the temperature range ...

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