Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 3 за автором "Belyaev, A.E."

Результати 1-2 з 2

Effect of microwave radiation on I-V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN

Belyaev, A.E.; Boltovets, N.S.; Zhilyaev, Yu.V.; Zhigunov, V.S.; Konakova, R.V.; Panteleev, V.N.; Sachenko, A.V.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)

We studied ohmic contacts Au-Pd-Ti-Pd-n-AlN and Au-TiB₂-Al-Ti-n-GaN with contact resistivity ρс = 0.18cm² and 1.6 *10⁻⁴ Ω∙cm² , respectively, and the effect of microwave treatment on their electrophysical properties. ...
X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates

Safriuk, N.V.; Stanchu, G.V.; Kuchuk, A.V.; Kladko, V.P.; Belyaev, A.E.; Machulin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)

Methodical approaches to the analysis of X-ray data for GaN films grown on various buffer layers and different substrates are presented in this work. Justification of dislocation structure investigation by various methods ...

Результати 1-2 з 2

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