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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions 
    Fodchuk, I.M.; Gutsuliak, I.I.; Zaplitniy, R.A.; Balovsyak, S.V.; Yaremiy, I.P.; Bonchyk, O.Yu.; Savitskiy, G.V.; Syvorotka, I.M.; Lytvyn, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The scattering field gradient maps of surface layer magnetic domains in Y₂.₉₅La₀.₀₅Fe₅O₁₂ iron-yttrium garnet modified by high-dose ion implantation with nitrogen ions N+ were obtained by the method of magnetic force ...
  • On features of crystal structure of semiconductor-ferroelectric Ag₃AsS₃ 
    Borovoy, N.; Gololobov, Yu.; Isaienko, G.; Salnik, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The temperature dependences of the unit cell parameters a(T) and c(T) of Ag₃AsS₃ were measured by the X-ray dilatometry method with high precision within the temperature range 100 to 300 K in the dark mode and under ...
  • Radiation-resistant ultraviolet curable polyurethane films with CdSe-ZnS сore-shell nanocrystals 
    Kulish, N.R.; Kunets, V.P.; Narsingi, K.Y.; Manasreh, M.O.; Kunets, Vas. P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The effect of proton fluence of different doses (up to 9×10¹⁵ protons/cm² ) on the absorption spectra of UV-cured polyurethane films doped by CdSe/ZnS nanocrystals has been investigated. We found that the degradation of ...
  • Raman scattering studies of composites based on Cu₆PS₅X (X = I, Br) superionic nanocrystals 
    Studenyak, I.P.; Kranjčec, M.; Buchuk, R.Yu.; Stephanovich, V.O.; Kökényesi, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Composites were prepared by mixing Cu₆PS₅X (X = I, Br) nanocrystalline powders obtained by ball milling with different polymers. The average nanocrystal size was estimated from X-ray diffraction; the composites were ...
  • Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs 
    Rudenko, T.; Nazarov, A.; Kilchytska, V.; Flandre, D.; Popov, V.; Ilnitsky, M.; Lysenko, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The charge coupling between the gate and substrate is a fundamental property of any fully-depleted silicon-on-insulator (SOI) MOS transistor, which manifests itself as a dependence of electrical characteristics at one ...
  • Use of radiation from PC screen for non-destructive controlling the internal strains in transparent parts 
    Maslov, V.P.; Kachur, N.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    It is known that the most widely used method to control internal strains is the optical polarization method. However, the sources of polarized radiation are the most problem issue of this method. There are some difficulties ...
  • Wannier–Stark electro-optical effect and photonic modes in 2D macroporous silicon structures with SiO₂ nanocoatings 
    Karachevtseva, L.; Goltviansky, Yu.; Kolesnyk, O.; Lytvynenko, O.; Stronska, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We have investigated the IR light absorption oscillations in 2D macroporous silicon structures with SiO₂ nanocoatings, taking into account the Wannier–Stark electrooptical effect caused by a strong electric field on the ...
  • X-ray diffraction investigation of GaN layers on Si(111) and Al₂O₃ (0001) substrates 
    Safriuk, N.V.; Stanchu, G.V.; Kuchuk, A.V.; Kladko, V.P.; Belyaev, A.E.; Machulin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Methodical approaches to the analysis of X-ray data for GaN films grown on various buffer layers and different substrates are presented in this work. Justification of dislocation structure investigation by various methods ...

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