Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10
http://dspace.nbuv.gov.ua:80/xmlui/handle/123456789/114586
2024-03-28T13:44:45ZChange of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing
http://dspace.nbuv.gov.ua:80/xmlui/handle/123456789/118345
Change of parameters of semiinsulated undoped GaAs nonstoichiometric crystals under annealing
Shutov, S.V.; Shtan’ko, A.D.; Kurak, V.V.; Litvinova, M.B.
The time dependences of changes of the electrophysical, mechanical, and light
emitting characteristics of semiinsulated undoped GaAs single crystals on the dissolving
annealing (Т = 1050 ºС) with the consequent quenching are obtained. The role of
vacancies, interstitial point defects, and dislocations in nonstoichiometric crystals is
revealed.
2007-01-01T00:00:00ZChemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering
http://dspace.nbuv.gov.ua:80/xmlui/handle/123456789/118344
Chemical composition and light emission properties of Si-rich-SiOx layers prepared by magnetron sputtering
Khomenkova, L.; Korsunska, N.; Sheinkman, M.; Stara, T.
The process of thermal decomposition of SiOx layers prepared by magnetron
sputtering is studied with the use of photoluminescence and Auger and SIMS
spectroscopies. From these measurements, we obtained the distributions of the emission
properties and the chemical composition over the depth. The effect of the redistribution
of silicon and oxygen over the depth is found after the high-temperature annealing which
results in the formation of a Si nanocrystal. These redistributions result in the appearance
of a Si-depleted region near the layer-substrate interface. The formation of a depletion
layer is dependent on the excess of Si. A decrease of the silicon content over the depth of
annealed layers is accompanied by a decrease of the Si nanocrystal size, as it is
evidenced by the blue shift of the photoluminescence maximum. The mechanism of
decomposition of SiOx and the possible reasons for the appearance of a Si-depleted
region are discussed.
2007-01-01T00:00:00ZSpectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure
http://dspace.nbuv.gov.ua:80/xmlui/handle/123456789/118343
Spectral distribution of photoelectric quantum yield of thin-film Au-CdTe diode structure
Grushko, E.V.; Maslyanchuk, O.L.; Mathew, X.; Motushchuk, V.V.; Kosyachenko, L.A.; Streltsov, E.A.
A study of the Au/CdTe Schottky diodes fabricated by vacuum evaporation of
a semitransparent Au layer over an electrodeposited CdTe thin film is reported. The
theoretical model of the photocurrent spectra for an Au/CdTe Schottky diode based on
the continuity equation and incorporating the surface recombination losses does not
explain the measured spectra in the entire range of wavelengths, particularly the abovementioned
decay in the short-wavelength region. The satisfactory description of the
measured spectra is achieved by proposing a model, in which the surface recombination
along with the Schottky effect resulted in the presence of a dead layer in the space-charge
region is taken into account. By varying the parameters such as uncompensated carrier
concentration and carrier lifetime, the above model can explain the actual photoresponse
spectra.
2007-01-01T00:00:00ZDependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons
http://dspace.nbuv.gov.ua:80/xmlui/handle/123456789/118342
Dependence of the defect introduction rate on the dose of irradiation of p-Si by fast-pile neutrons
Dolgolenko, A.P.; Varentsov, M.D.; Gaidar, G.P.; Litovchenko, P.G.
We have studied the high-resistance samples of p-Si (р00 = (3.3 ± 0.5) ×
× 10¹² cm⁻³
) and n-Si (n₀ = (2.0 ± 0.3) × 10¹² cm⁻³
) grown by the floating-zone technique
after the irradiation by fast-pile neutrons at 287 К. The dose and the temperature
dependences of the effective concentration of carriers have been measured. The
calculation has been carried out in the framework of Gossick's corrected model. It is
shown that the radiation hardness of n- and p-Si, on the one hand, is defined by clusters,
and, on the other hand, by vacancy defects (acceptors) in n-Si and by interstitial defects
(donors and acceptors) in p-Si. We have determined that, during the irradiation of p-Si by
small doses of neutrons, the change of a charge state of interstitial defects leads to the
annealing of these defects and to a decrease of their introduction rate.
2007-01-01T00:00:00Z