Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 2
http://dspace.nbuv.gov.ua:80/xmlui/handle/123456789/114537
2024-03-28T23:20:56ZOn the 60-year jubilee of Machulin Volodymyr Fedorovych Academician of NAS of Ukraine
http://dspace.nbuv.gov.ua:80/xmlui/handle/123456789/119247
On the 60-year jubilee of Machulin Volodymyr Fedorovych Academician of NAS of Ukraine
23 April 2010 is the jubilee date in life of
Academician of NAS of Ukraine Machulin Volodymyr
Fedorovych: he has reached 60-year age.
2010-01-01T00:00:00ZNanoprobe spectroscopy of capillary forces and its application for a real surface diagnostics
http://dspace.nbuv.gov.ua:80/xmlui/handle/123456789/118328
Nanoprobe spectroscopy of capillary forces and its application for a real surface diagnostics
Efremov, A.A.; Lytvyn, P.M.; Anishchenko, А.O.; Dyachyns’ka, O.M.; Aleksyeyeva, T.A.; Prokopenko, I.V.
The paper presents an overview and analysis of the most reliable and at the
same time rather simple theoretical models describing liquid nanomeniscus geometry and
forces occurring between atomic force microscope (AFM) probe and a real surface.
There are experimental results in capillary bridge force rupture measured in air, and
interaction force under water buffer obtained over surfaces of different nature. It is
shown that the theoretical models quite adequately describe the processes observed
experimentally and, in particular, bridge ruptures dynamics at the vertical probe
withdraw for different speeds. Discussed here are some methodological peculiarities and
nanocapillary force spectroscopy diagnostic capabilities for surface energy mapping,
prospects of using of a liquid nanomeniscus in local nanochemistry, nanolithography and
nano-electrochemistry of a surface.
2010-01-01T00:00:00ZImpurity scattering of band carriers
http://dspace.nbuv.gov.ua:80/xmlui/handle/123456789/118238
Impurity scattering of band carriers
Boiko, I.I.
Mobility of band carriers scattered on donors, partially ionized, partially
neutral, at low temperatures, is considered in general and calculated for AIII-BV group
crystals. It is shown that temperature dependence of mobility is determined by
relationship between number of ionized and neutral donors and by average energy of
electrons.
2010-01-01T00:00:00ZStructural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry
http://dspace.nbuv.gov.ua:80/xmlui/handle/123456789/118237
Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry
Fodchuk, І.М.; Dovganyuk, V.V.; Litvinchuk, Т.V.; Kladko, V.P.; Slobodian, М.V.; Gudymenko, O.Yo.; Swiatek, Z.
Structural changes in silicon single crystals irradiated with high-energy
electrons (Е = 18 MeV) were studied. The peculiarities of diffraction reflection curve
behaviour and changes in the profiles of isodiffusion lines in high-resolution reciprocal
space maps (HR-RSMs) were found as a function of the radiation dose. The generalized
dynamic theory of X-ray Bragg-diffraction in crystals comprising defects of several types
(spherical and disc-shaped clusters as well as dislocation loops) and a damaged nearsurface
layer was used for explanation.
2010-01-01T00:00:00Z