Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12http://dspace.nbuv.gov.ua:80/xmlui/handle/123456789/1145762024-03-28T17:34:38Z2024-03-28T17:34:38ZAuthor Index 2009http://dspace.nbuv.gov.ua:80/xmlui/handle/123456789/1192452017-06-06T00:03:49Z2009-01-01T00:00:00ZAuthor Index 2009
2009-01-01T00:00:00ZDielectric properties of nematic liquid crystals with Fe₃O₄ nanoparticles in direct magnetic fieldGornitska, O.P.Koval’chuk, A.V.Koval’chuk, T.N.Kopčanský, P.Timko, M.Zavisova, V.Koneracká, M.Tomašovičová, N.Jadzyn, J.Studenyak, I.P.http://dspace.nbuv.gov.ua:80/xmlui/handle/123456789/1188822017-06-01T00:02:50Z2009-01-01T00:00:00ZDielectric properties of nematic liquid crystals with Fe₃O₄ nanoparticles in direct magnetic field
Gornitska, O.P.; Koval’chuk, A.V.; Koval’chuk, T.N.; Kopčanský, P.; Timko, M.; Zavisova, V.; Koneracká, M.; Tomašovičová, N.; Jadzyn, J.; Studenyak, I.P.
Researched within the frequency range 10⁻¹–10⁶ Hz were dielectric properties
of pure 6CHBT liquid crystals and 6CHBT ones with the impurity of Fe₃O₄ nanoparticles
that have the mean diameter 5 nm and weight concentration 10⁻⁴ %. The study was
performed without and under the influence of direct magnetic field with the induction
0.45 and 0.60 T. It has been shown that the magnetic field influences on the parameters
of the near-electrode area of liquid crystal. In the case of liquid crystal with magnetic
nanoparticles, the parameter changes caused by the magnetic field depend on the
induction value.
2009-01-01T00:00:00ZParameters of the energy spectrum for holes in CuInSe₂Gorley, P.М.Prokopenko, I.V.Galochkinа, О.О.Horley, P.P.Vorobiev, Yu.V.González-Hernández, J.http://dspace.nbuv.gov.ua:80/xmlui/handle/123456789/1188812017-06-01T00:06:14Z2009-01-01T00:00:00ZParameters of the energy spectrum for holes in CuInSe₂
Gorley, P.М.; Prokopenko, I.V.; Galochkinа, О.О.; Horley, P.P.; Vorobiev, Yu.V.; González-Hernández, J.
This paper reports the coefficients Ca,b for the k-linear term in dispersion
relation E(k) for holes of the upper valence bands Г⁻₆ and Г⁺₇ in p-CuInSe₂ crystals. We
also obtained the tensor components for the carrier effective masses, in all three valence sub-bands of the model semiconductor. It was shown that the energy spectrum parameters for holes in CuInSe₂ allow successful explanation for the anisotropy of tensor
components describing the interband light absorption coefficient and the published data
for the temperature variation of the Hall coefficient, total Hall mobility and thermal
voltage within the temperature range 100 K ≤ T ≤ 350 K.
2009-01-01T00:00:00ZOptical and photoluminescent properties of Ag/Al₂O₃ nanocomposite films obtained by pulsed laser depositionManoilov, E.G.http://dspace.nbuv.gov.ua:80/xmlui/handle/123456789/1188802017-06-01T00:06:12Z2009-01-01T00:00:00ZOptical and photoluminescent properties of Ag/Al₂O₃ nanocomposite films obtained by pulsed laser deposition
Manoilov, E.G.
The method of pulsed laser deposition in vacuum from forward and backward
particle flows from an erosion torch was used to prepare silver films and Ag/Al₂O₃
nanocomposite films. Measured were transmission and time-resolved photoluminescence
spectra. The authors studied the influence of conditions for film formation on their
optical and photoluminescent properties. For the first time, there observed was
luminescence with quantum energy 1.6 eV and relaxation times up to several
microseconds.
2009-01-01T00:00:00Z