Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13http://dspace.nbuv.gov.ua:80/xmlui/handle/123456789/1145352024-03-28T16:52:41Z2024-03-28T16:52:41ZAuthor Index 2010http://dspace.nbuv.gov.ua:80/xmlui/handle/123456789/1192482017-06-06T00:02:37Z2010-01-01T00:00:00ZAuthor Index 2010
2010-01-01T00:00:00ZOn the 60-year jubilee of Machulin Volodymyr Fedorovych Academician of NAS of Ukrainehttp://dspace.nbuv.gov.ua:80/xmlui/handle/123456789/1192472017-06-06T00:02:45Z2010-01-01T00:00:00ZOn the 60-year jubilee of Machulin Volodymyr Fedorovych Academician of NAS of Ukraine
23 April 2010 is the jubilee date in life of
Academician of NAS of Ukraine Machulin Volodymyr
Fedorovych: he has reached 60-year age.
2010-01-01T00:00:00ZNonlinear stochastic relaxation dynamics in spin-crossover solid-state compoundsGudyma, Iu.V.Maksymov, A.Iu.http://dspace.nbuv.gov.ua:80/xmlui/handle/123456789/1187402017-06-01T00:04:41Z2010-01-01T00:00:00ZNonlinear stochastic relaxation dynamics in spin-crossover solid-state compounds
Gudyma, Iu.V.; Maksymov, A.Iu.
A study of dynamic of spin-crossover solid-state compound has been carried
out. The investigated macroscopic phenomenological model for molecular spin-crossover
complexes with optical control parameter has been extended to the case of noise action.
The noise-driven phase transition was observed. Also, ascertained was the role of
additive noise as a main factor for suppressing the potential barrier height.
2010-01-01T00:00:00ZElectrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructureGorley, P.M.Grushka, Z.M.Grushka, O.G.Gorley, P.P.Zabolotsky, I.I.http://dspace.nbuv.gov.ua:80/xmlui/handle/123456789/1187392017-06-01T00:05:36Z2010-01-01T00:00:00ZElectrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure
Gorley, P.M.; Grushka, Z.M.; Grushka, O.G.; Gorley, P.P.; Zabolotsky, I.I.
Using the method of deposition over the optical contact, the authors created nSnS2/n-CdIn₂Te₄
heterojunction and investigated temperature evolution of its currentvoltage
characteristics under the forward bias U ≤ 3 V. Analyzing temperature
dependence of the curves obtained, the main mechanisms of current transport through the
semiconductor contact were determined, allowing prediction of successful possible
applications of the heterojunction studied under high temperatures and elevated radiation
due to the parameters of the base semiconductors and the diode structure itself.
2010-01-01T00:00:00Z