Перегляд за автором "Syngayivska, G.I."

Результати 1-2 з 2

Comparison of electron transport in polar materials for the models of low-density and high-density electron gas. Application to bulk GaN

Korotyeyev, V.V.; Syngayivska, G.I.; Kochelap, V.A.; Klimov, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)

We analyzed the steady-state electron transport for bulk GaN in frame of two opposite approaches: the electron temperature approach that assumes a high-density electron gas and numerical single-particle Monte-Carlo ...
Electron transport in crossed electric and magnetic fields under the condition of the electron streaming in GaN

Syngayivska, G.I.; Korotyeyev, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)

High-field electron transport has been studied in crossed electric and magnetic fields in bulk GaN with doping of 10¹⁶ cm⁻³ and compensation around 90% at the low lattice temperature (30 K). The electron distribution ...

Результати 1-2 з 2

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